| 10396146 |
Leakage current reduction in stacked metal-insulator-metal capacitors |
Takashi Ando, Hemanth Jagannathan, John Rozen |
2019-08-27 |
| 10395989 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETs |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee |
2019-08-27 |
| 10381433 |
Leakage current reduction in stacked metal-insulator-metal capacitors |
Takashi Ando, Hemanth Jagannathan, John Rozen |
2019-08-13 |
| 10312147 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-VT for VFETs |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee |
2019-06-04 |
| 10304746 |
Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments |
Lisa F. Edge, Hemanth Jagannathan, Vamsi K. Paruchuri |
2019-05-28 |
| 10297671 |
Uniform threshold voltage for nanosheet devices |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan, Koji Watanabe |
2019-05-21 |
| 10297598 |
Formation of full metal gate to suppress interficial layer growth |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan |
2019-05-21 |
| 10290700 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement |
Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan |
2019-05-14 |
| 10283620 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee |
2019-05-07 |
| 10170316 |
Controlling threshold voltage in nanosheet transistors |
Hemanth Jagannathan |
2019-01-01 |
