Issued Patents 2019
Showing 26–50 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10374091 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2019-08-06 |
| 10374083 | Vertical fin field effect transistor with reduced gate length variations | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2019-08-06 |
| 10367076 | Air gap spacer with controlled air gap height | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-07-30 |
| 10361197 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-07-23 |
| 10361200 | Vertical fin field effect transistor with integral U-shaped electrical gate connection | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2019-07-23 |
| 10354930 | S/D contact resistance measurement on FinFETs | Zuoguang Liu, Chen Zhang | 2019-07-16 |
| 10347784 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-07-09 |
| 10347765 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2019-07-09 |
| 10340364 | H-shaped VFET with increased current drivability | Chen Zhang, Kangguo Cheng, Tenko Yamashita, Wenyu Xu | 2019-07-02 |
| 10340292 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2019-07-02 |
| 10332800 | Vertical field effect transistor having U-shaped top spacer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-06-25 |
| 10332962 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2019-06-25 |
| 10325983 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2019-06-18 |
| 10325995 | Field effect transistor air-gap spacers with an etch-stop layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-06-18 |
| 10312350 | Nanosheet with changing SiGe percentage for SiGe lateral recess | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-06-04 |
| 10304736 | Self-aligned contact | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-05-28 |
| 10297688 | Vertical field effect transistor with improved reliability | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2019-05-21 |
| 10283625 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2019-05-07 |
| 10283504 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2019-05-07 |
| 10262900 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2019-04-16 |
| 10256328 | Dummy dielectric fins for finFETs with silicon and silicon germanium channels | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-04-09 |
| 10243042 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2019-03-26 |
| 10242986 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-26 |
| 10236355 | Fabrication of a vertical fin field effect transistor with a reduced contact resistance | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-19 |
| 10236214 | Vertical transistor with variable gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-19 |