Issued Patents 2019
Showing 51–60 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10229971 | Integration of thick and thin nanosheet transistors on a single chip | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-03-12 |
| 10217817 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2019-02-26 |
| 10217845 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-02-26 |
| 10199278 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-02-05 |
| 10177223 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2019-01-08 |
| 10177046 | Vertical FET with different channel orientations for NFET and PFET | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2019-01-08 |
| 10170590 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Heng Wu, Peng Xu | 2019-01-01 |
| 10170636 | Gate-to-bulk substrate isolation in gate-all-around devices | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2019-01-01 |
| 10170618 | Vertical transistor with reduced gate-induced-drain-leakage current | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-01-01 |
| 10170331 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-01-01 |