Issued Patents 2019
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10236217 | Stacked field-effect transistors (FETs) with shared and non-shared gates | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2019-03-19 |
| 10229921 | Structure featuring ferroelectric capacitance in interconnect level for steep sub-threshold complementary metal oxide semiconductor transistors | Takashi Ando, Karthik Balakrishnan, Alexander Reznicek | 2019-03-12 |
| 10229996 | Strained stacked nanowire field-effect transistors (FETs) | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-03-12 |
| 10229917 | Thin SRAM cell having vertical transistors | Karthik Balakrishnan, Michael A. Guillorn, Alexander Reznicek | 2019-03-12 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2019-02-26 |
| 10211341 | Tensile strained high percentage silicon germanium alloy FinFETS | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin, Robin M. Schulz | 2019-02-19 |
| 10211320 | Fin cut without residual fin defects | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2019-02-19 |
| 10199220 | Semiconductor structure having insulator pillars and semiconductor material on substrate | Alexander Reznicek, Dominic J. Schepis, Kangguo Cheng, Bruce B. Doris | 2019-02-05 |
| 10175192 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2019-01-08 |
| 10177169 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Ali Khakifirooz, Shogo Mochizuki, Alexander Reznicek | 2019-01-08 |
| 10177235 | Nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-01-08 |
| 10177168 | Fin field-effect transistor having an oxide layer under one or more of the plurality of fins | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2019-01-08 |
| 10170537 | Capacitor structure compatible with nanowire CMOS | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2019-01-01 |
| 10170469 | Vertical field-effect-transistors having multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-01-01 |
| 10170465 | Co-fabrication of vertical diodes and fin field effect transistors on the same substrate | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-01-01 |
| 10170464 | Compound semiconductor devices having buried resistors formed in buffer layer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-01-01 |
| 10170302 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2019-01-01 |
| 10170308 | Fabricating semiconductor devices by cross-linking and removing portions of deposited HSQ | Guy M. Cohen, Sanghoon Lee, Alexander Reznicek | 2019-01-01 |
| 10170660 | Digital alloy germanium heterojunction solar cell | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2019-01-01 |
| 10170637 | Perfectly symmetric gate-all-around FET on suspended nanowire | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2019-01-01 |
| 10170619 | Vertical schottky contact FET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2019-01-01 |
| 10170587 | Heterogeneous source drain region and extension region | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2019-01-01 |
| 10170577 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Alexander Reznicek | 2019-01-01 |
| 10170550 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Ali Khakifirooz, Alexander Reznicek | 2019-01-01 |