Issued Patents 2019
Showing 26–50 of 106 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10424482 | Methods and structures for forming a tight pitch structure | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2019-09-24 |
| 10410928 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu | 2019-09-10 |
| 10411094 | Method and structure for forming silicon germanium FinFET | Kangguo Cheng, Juntao Li, Heng Wu | 2019-09-10 |
| 10411114 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Xin Miao, Wenyu Xu | 2019-09-10 |
| 10411106 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-09-10 |
| 10403716 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-09-03 |
| 10396151 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |
| 10396172 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-08-27 |
| 10396179 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Xuefeng Liu, Yongan Xu | 2019-08-27 |
| 10395994 | Equal spacer formation on semiconductor device | Heng Wu, Juntao Li, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |
| 10388569 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2019-08-20 |
| 10388570 | Substrate with a fin region comprising a stepped height structure | Kangguo Cheng | 2019-08-20 |
| 10388572 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Heng Wu | 2019-08-20 |
| 10381267 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Chi-Chun Liu | 2019-08-13 |
| 10381476 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-08-13 |
| 10381262 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Heng Wu | 2019-08-13 |
| 10381355 | Dense vertical field effect transistor structure | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2019-08-13 |
| 10374089 | Tensile strain in NFET channel | Kangguo Cheng, Juntao Li, Heng Wu | 2019-08-06 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie | 2019-07-30 |
| 10361308 | Self-aligned gate cut with polysilicon liner oxidation | Kangguo Cheng | 2019-07-23 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2019-07-23 |
| 10361125 | Methods and structures for forming uniform fins when using hardmask patterns | Kangguo Cheng, Yann Mignot, Choonghyun Lee | 2019-07-23 |
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Xuefeng Liu, Yongan Xu | 2019-07-23 |
| 10350856 | Corrosion and wear resistant coating on zirconium alloy cladding | Lu Cai | 2019-07-16 |
| 10347731 | Transistor with asymmetric spacers | Zhenxing Bi, Kangguo Cheng, Heng Wu | 2019-07-09 |