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Electrostatic discharge devices and methods of manufacture |
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2018-12-18 |
| 10153201 |
Method for making a dipole-based contact structure to reduce the metal-semiconductor contact resistance in MOSFETs |
Hui-feng Li, Vijay Narayanan, Hiroaki Niimi, Tenko Yamashita |
2018-12-11 |
| 10141426 |
Vertical transistor device |
Brent A. Anderson, Fee Li Lie, Shogo Mochizuki, Junli Wang |
2018-11-27 |
| 10083861 |
HDP fill with reduced void formation and spacer damage |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-09-25 |
| 10002792 |
HDP fill with reduced void formation and spacer damage |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-06-19 |
| 10002962 |
Vertical FET structure |
Brent A. Anderson, Fee Li Lie, Edward J. Nowak, Junli Wang |
2018-06-19 |
| 9991267 |
Forming eDRAM unit cell with VFET and via capacitance |
Brent A. Anderson, Xuefeng Liu, Junli Wang |
2018-06-05 |
| 9954101 |
Precise junction placement in vertical semiconductor devices using etch stop layers |
Liying Jiang, Siyuranga O. Koswatta, Junli Wang |
2018-04-24 |
| 9947748 |
Dielectric isolated SiGe fin on bulk substrate |
Shogo Mochizuki, Tenko Yamashita |
2018-04-17 |
| 9941175 |
Dielectric isolated SiGe fin on bulk substrate |
Shogo Mochizuki, Tenko Yamashita |
2018-04-10 |
| 9935003 |
HDP fill with reduced void formation and spacer damage |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-04-03 |
| 9929057 |
HDP fill with reduced void formation and spacer damage |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-03-27 |
