| 9812318 |
Low temperature molecular layer deposition of SiCON |
Mark Saly, Lakmal C. Kalutarage |
2017-11-07 |
| 9799533 |
Methods of etching films comprising transition metals |
Jeffrey W. Anthis, Benjamin Schmiege |
2017-10-24 |
| 9799511 |
Methods for depositing low k and low wet etch rate dielectric thin films |
Ning Li, Mark Saly, Mihaela Balseanu, Li-Qun Xia |
2017-10-24 |
| 9721787 |
Film deposition using tantalum precursors |
Jeffrey W. Anthis |
2017-08-01 |
| 9716012 |
Methods of selective layer deposition |
Huixiong Dai, Patrick M. Martin, Timothy Michaelson, Kadthala Ramaya Narendrnath, Robert Jan Visser +2 more |
2017-07-25 |
| 9685325 |
Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
Mark Saly, Jessica S. Kachian |
2017-06-20 |
| 9683287 |
Deposition of films comprising aluminum alloys with high aluminum content |
Srinivas Gandikota, Xinliang Lu, Wei V. Tang, Jing Zhou, Seshadri Ganguli +6 more |
2017-06-20 |
| 9643844 |
Low temperature atomic layer deposition of films comprising SiCN or SiCON |
— |
2017-05-09 |
| 9631278 |
Metal silicide formation through an intermediate metal halogen compound |
Bencherki Mebarki |
2017-04-25 |
| 9580799 |
Nitrogen-containing ligands and their use in atomic layer deposition methods |
Jeffrey W. Anthis |
2017-02-28 |
