Issued Patents 2017
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9842851 | Three-dimensional memory devices having a shaped epitaxial channel portion | Tuan Pham | 2017-12-12 |
| 9831118 | Reducing neighboring word line in interference using low-k oxide | Liang Pang, Yingda Dong, Ching-Huang Lu | 2017-11-28 |
| 9830998 | Stress patterns to detect shorts in three dimensional non-volatile memory | Sagar Magia, Ankitkumar Babariya, Jagdish Sabde | 2017-11-28 |
| 9825051 | Three dimensional NAND device containing fluorine doped layer and method of making thereof | Peter Rabkin, Johann Alsmeier | 2017-11-21 |
| 9799669 | Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device | Peter Rabkin, Johann Alsmeier | 2017-10-24 |
| 9799671 | Three-dimensional integration schemes for reducing fluorine-induced electrical shorts | Matthias Baenninger, Stephen Shi, Johann Alsmeier | 2017-10-24 |
| 9793283 | High conductivity channel for 3D memory | Liang Pang, Yingda Dong | 2017-10-17 |
| 9780108 | Ultrathin semiconductor channel three-dimensional memory devices | Peter Rabkin, Masaaki Higashitani, Johann Alsmeier | 2017-10-03 |
| 9761604 | 3D vertical NAND with III-V channel | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2017-09-12 |
| 9754958 | Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof | Sateesh Koka, Raghuveer S. Makala, Somesh Peri | 2017-09-05 |
| 9748267 | Three dimensional NAND device with channel contacting conductive source line and method of making thereof | Yanli Zhang, Go Shoji, Johann Alsmeier, Yingda Dong, Jiahui Yuan | 2017-08-29 |
| 9698152 | Three-dimensional memory structure with multi-component contact via structure and method of making thereof | Somesh Peri, Sateesh Koka, Raghuveer S. Makala, Rahul Sharangpani, Matthias Baenninger +1 more | 2017-07-04 |
| 9685454 | Method of forming 3D vertical NAND with III-V channel | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2017-06-20 |
| 9666594 | Multi-charge region memory cells for a vertical NAND device | Genta Mizuno, Masanori Tsutsumi | 2017-05-30 |
| 9666593 | Alternating refractive index in charge-trapping film in three-dimensional memory | Liang Pang, Yingda Dong | 2017-05-30 |
| 9666590 | High stack 3D memory and method of making | Henry Chien, Johann Alsmeier | 2017-05-30 |
| 9659956 | Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation | Tuan Pham, Henry Chien | 2017-05-23 |
| 9627403 | Multilevel memory stack structure employing support pillar structures | Jin Liu, Tong Zhang, Yao-Sheng Lee, Johann Alsmeier | 2017-04-18 |
| 9583500 | Multilevel memory stack structure and methods of manufacturing the same | Johann Alsmeier, Henry Chien | 2017-02-28 |
| 9564219 | Current based detection and recording of memory hole-interconnect spacing defects | Sagar Magia, Jagdish Sabde, Ankitkumar Babariya | 2017-02-07 |
| 9559117 | Three-dimensional non-volatile memory device having a silicide source line and method of making thereof | Yingda Dong, Johann Alsmeier | 2017-01-31 |
| 9543320 | Three-dimensional memory structure having self-aligned drain regions and methods of making thereof | Liang Pang, Yingda Dong | 2017-01-10 |