Issued Patents 2017
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852803 | Dummy word line control scheme for non-volatile memory | Vinh Diep, Ching-Huang Lu, Yingda Dong | 2017-12-26 |
| 9831118 | Reducing neighboring word line in interference using low-k oxide | Yingda Dong, Jayavel Pachamuthu, Ching-Huang Lu | 2017-11-28 |
| 9830963 | Word line-dependent and temperature-dependent erase depth | Vinh Diep, Ching-Huang Lu, Yingda Dong | 2017-11-28 |
| 9812462 | Memory hole size variation in a 3D stacked memory | Ashish Baraskar, Yanli Zhang, Yingda Dong | 2017-11-07 |
| 9800232 | Stitchable global clock for 3D chips | Robert L. Franch, Eren Kursun, Phillip J. Restle | 2017-10-24 |
| 9793283 | High conductivity channel for 3D memory | Jayavel Pachamuthu, Yingda Dong | 2017-10-17 |
| 9786378 | Equalizing erase depth in different blocks of memory cells | Zhengyi Zhang, Caifu Zeng, Xuehong Yu, Yingda Dong | 2017-10-10 |
| 9748266 | Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof | Ashish Baraskar, Yanli Zhang, Ching-Huang Lu, Matthias Baenninger, Yingda Dong | 2017-08-29 |
| 9715937 | Dynamic tuning of first read countermeasures | Yingda Dong, Jiahui Yuan, Charles See Yeung Kwong | 2017-07-25 |
| 9673216 | Method of forming memory cell film | Ashish Baraskar, Yingda Dong, Ching-Huang Lu | 2017-06-06 |
| 9666593 | Alternating refractive index in charge-trapping film in three-dimensional memory | Yingda Dong, Jayavel Pachamuthu | 2017-05-30 |
| 9620233 | Word line ramping down scheme to purge residual electrons | Yingda Dong, Xuehong Yu | 2017-04-11 |
| 9612612 | Tunable sector buffer for wide bandwidth resonant global clock distribution | Thomas J. Bucelot, Alan J. Drake, Robert A. Groves, Jason D. Hibbeler, Yong-im Kim +3 more | 2017-04-04 |
| 9607707 | Weak erase prior to read | Yingda Dong, Xuehong Yu, Jingjian Ren | 2017-03-28 |
| 9595342 | Method and apparatus for refresh programming of memory cells based on amount of threshold voltage downshift | Yingda Dong, Jian Chen | 2017-03-14 |
| 9583198 | Word line-dependent and temperature-dependent pass voltage during programming | Yingda Dong, Jiahui Yuan, Jingjian Ren | 2017-02-28 |
| 9543320 | Three-dimensional memory structure having self-aligned drain regions and methods of making thereof | Jayavel Pachamuthu, Yingda Dong | 2017-01-10 |