| 9753657 |
Dynamic reconditioning of charge trapped based memory |
Nian Niles Yang, James Fitzpatrick |
2017-09-05 |
| 9748267 |
Three dimensional NAND device with channel contacting conductive source line and method of making thereof |
Yanli Zhang, Go Shoji, Johann Alsmeier, Jayavel Pachamuthu, Yingda Dong |
2017-08-29 |
| 9715937 |
Dynamic tuning of first read countermeasures |
Liang Pang, Yingda Dong, Charles See Yeung Kwong |
2017-07-25 |
| 9691473 |
Adaptive operation of 3D memory |
Niles Yang, James Fitzpatrick |
2017-06-27 |
| 9583198 |
Word line-dependent and temperature-dependent pass voltage during programming |
Liang Pang, Yingda Dong, Jingjian Ren |
2017-02-28 |
| 9564213 |
Program verify for non-volatile storage |
Yongke Sun, Yingda Dong |
2017-02-07 |
| 9552251 |
Neighboring word line program disturb countermeasure for charge-trapping memory |
Yingda Dong, Jian Chen |
2017-01-24 |