Issued Patents 2017
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9842907 | Memory device containing cobalt silicide control gate electrodes and method of making thereof | Sateesh Koka, Zhenyu Lu, Somesh Peri, Rahul Sharangpani | 2017-12-12 |
| 9842857 | Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices | Rahul Sharangpani, Sateesh Koka, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier | 2017-12-12 |
| 9824966 | Three-dimensional memory device containing a lateral source contact and method of making the same | Senaka Kanakamedala, Yanli Zhang, Rahul Sharangpani, James Kai, Yao-Sheng Lee | 2017-11-21 |
| 9812463 | Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof | Rahul Sharangpani, Senaka Kanakamedala, Fei Zhou, Somesh Peri, Masanori Tsutsumi +4 more | 2017-11-07 |
| 9806089 | Method of making self-assembling floating gate electrodes for a three-dimensional memory device | Rahul Sharangpani, Somesh Peri, Yanli Zhang | 2017-10-31 |
| 9806090 | Vertical floating gate NAND with selectively deposited ALD metal films | Rahul Sharangpani, Thomas Jongwan Kwon, Senaka Kanakamedala, George Matamis | 2017-10-31 |
| 9793139 | Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines | Rahul Sharangpani, Keerti Shukla, Somesh Peri, Yao-Sheng Lee | 2017-10-17 |
| 9780182 | Molybdenum-containing conductive layers for control gate electrodes in a memory structure | Somesh Peri, Sateesh Koka, Yao-Sheng Lee, Johann Alsmeier, George Matamis | 2017-10-03 |
| 9768270 | Method of selectively depositing floating gate material in a memory device | Marika Gunji-Yoneoka, Atsushi Suyama, Kensuke Yamaguchi, Hiroyuki Kinoshita, Rahul Sharangpani +2 more | 2017-09-19 |
| 9754958 | Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof | Jayavel Pachamuthu, Sateesh Koka, Somesh Peri | 2017-09-05 |
| 9698152 | Three-dimensional memory structure with multi-component contact via structure and method of making thereof | Somesh Peri, Sateesh Koka, Rahul Sharangpani, Matthias Baenninger, Jayavel Pachamuthu +1 more | 2017-07-04 |
| 9698153 | Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad | Jin Liu, Yanli Zhang, Murshed Chowdhury, Johann Alsmeier | 2017-07-04 |
| 9698223 | Memory device containing stress-tunable control gate electrodes | Rahul Sharangpani, George Matamis | 2017-07-04 |
| 9691884 | Monolithic three dimensional NAND strings and methods of fabrication thereof | Yanli Zhang, Rahul Sharangpani, Yao-Sheng Lee, Senaka Kanakamedala, George Matamis +1 more | 2017-06-27 |
| 9679906 | Three-dimensional memory devices containing memory block bridges | Zhenyu Lu, Johann Alsmeier, Daxin Mao, Wenguang Shi, Sateesh Koka +3 more | 2017-06-13 |
| 9659955 | Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure | Rahul Sharangpani, Sateesh Koka, Somesh Peri, Senaka Kanakamedala | 2017-05-23 |
| 9646975 | Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure | Somesh Peri, Sateesh Koka | 2017-05-09 |
| 9646990 | NAND memory strings and methods of fabrication thereof | Sateesh Koka, Yanli Zhang, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee +1 more | 2017-05-09 |
| 9627399 | Three-dimensional memory device with metal and silicide control gates | Senaka Kanakamedala, Yanli Zhang, Yao-Sheng Lee, George Matamis | 2017-04-18 |
| 9627395 | Enhanced channel mobility three-dimensional memory structure and method of making thereof | Yanli Zhang, Johann Alsmeier | 2017-04-18 |
| 9613977 | Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices | Rahul Sharangpani, Sateesh Koka, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier | 2017-04-04 |
| 9576975 | Monolithic three-dimensional NAND strings and methods of fabrication thereof | Yanli Zhang, James Kai, Jin Liu, Murshed Chowdhury, Camilla Huang +1 more | 2017-02-21 |
| 9576966 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Somesh Peri, Sateesh Koka, Rahul Sharangpani | 2017-02-21 |
| 9570463 | Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same | Yanli Zhang, Jin Liu, Murshed Chowdhury, Yao-Sheng Lee, Johann Alsmeier | 2017-02-14 |
| 9570460 | Spacer passivation for high-aspect ratio opening film removal and cleaning | Senaka Kanakamedala, Yao-Sheng Lee, George Matamis | 2017-02-14 |