Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9768270 | Method of selectively depositing floating gate material in a memory device | Marika Gunji-Yoneoka, Atsushi Suyama, Hiroyuki Kinoshita, Raghuveer S. Makala, Rahul Sharangpani +2 more | 2017-09-19 |
| 9716101 | Forming 3D memory cells after word line replacement | Zhenyu Lu, Hiro Kinoshita, Daxin Mao, Johann Alsmeier, Wenguang Shi +3 more | 2017-07-25 |
| 9601508 | Blocking oxide in memory opening integration scheme for three-dimensional memory structure | Jongsun Sel, Chan Park, Atsushi Suyama, Frank Yu, Hiroyuki Ogawa +6 more | 2017-03-21 |
| 9553100 | Selective floating gate semiconductor material deposition in a three-dimensional memory structure | Hiroyuki Kamiya | 2017-01-24 |