| 9853043 |
Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material |
Zhenyu Lu, Tong Zhang, Johann Alsmeier, Wenguang Shi, Henry Chien |
2017-12-26 |
| 9728551 |
Multi-tier replacement memory stack structure integration scheme |
Ching-Huang Lu, Zhenyu Lu, Jixin Yu, Johann Alsmeier, Wenguang Shi +1 more |
2017-08-08 |
| 9716101 |
Forming 3D memory cells after word line replacement |
Zhenyu Lu, Hiro Kinoshita, Johann Alsmeier, Wenguang Shi, Yingda Dong +3 more |
2017-07-25 |
| 9679906 |
Three-dimensional memory devices containing memory block bridges |
Zhenyu Lu, Johann Alsmeier, Wenguang Shi, Sateesh Koka, Raghuveer S. Makala +3 more |
2017-06-13 |
| 9673213 |
Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof |
Jixin Yu, Yanli Zhang, Zhenyu Lu, Johann Alsmeier |
2017-06-06 |
| 9543318 |
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors |
Zhenyu Lu, Koji Miyata, Junichi Ariyoshi, Johann Alsmeier, George Matamis +3 more |
2017-01-10 |