| 9825051 |
Three dimensional NAND device containing fluorine doped layer and method of making thereof |
Jayavel Pachamuthu, Johann Alsmeier |
2017-11-21 |
| 9818801 |
Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof |
Perumal Ratnam, Christopher J. Petti, Masaaki Higashitani |
2017-11-14 |
| 9799669 |
Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device |
Jayavel Pachamuthu, Johann Alsmeier |
2017-10-24 |
| 9780108 |
Ultrathin semiconductor channel three-dimensional memory devices |
Jayavel Pachamuthu, Masaaki Higashitani, Johann Alsmeier |
2017-10-03 |
| 9761604 |
3D vertical NAND with III-V channel |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2017-09-12 |
| 9721963 |
Three-dimensional memory device having a transition metal dichalcogenide channel |
Masaaki Higashitani |
2017-08-01 |
| 9711229 |
3D NAND with partial block erase |
Masaaki Higashitani |
2017-07-18 |
| 9685484 |
Reversible resistivity memory with crystalline silicon bit line |
Perumal Ratnam, Masaaki Higashitani, Chris Petti |
2017-06-20 |
| 9685454 |
Method of forming 3D vertical NAND with III-V channel |
Jayavel Pachamuthu, Johann Alsmeier, Masaaki Higashitani |
2017-06-20 |
| 9634097 |
3D NAND with oxide semiconductor channel |
Johann Alsmeier, Masaaki Higashitani |
2017-04-25 |