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Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof |
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Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer |
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Memory cells including vertically oriented adjustable resistance structures |
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Implementation of VMCO area switching cell to VBL architecture |
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2017-08-15 |
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Content addressable memory cells and memory arrays |
— |
2017-07-18 |
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Interleaved grouped word lines for three dimensional non-volatile storage |
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2017-04-18 |
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Vertical transistor and local interconnect structure |
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