Issued Patents 2017
Showing 26–33 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9653582 | Forming a Fin using double trench epitaxy | Veeraraghavan S. Basker, Pouya Hashemi, Alexander Reznicek | 2017-05-16 |
| 9620416 | Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance | Veeraraghavan S. Basker, Oleg Gluschenkov, Alexander Reznicek | 2017-04-11 |
| 9601565 | Zig-zag trench structure to prevent aspect ratio trapping defect escape | Judson R. Holt, Alexander Reznicek, Melissa A. Smith | 2017-03-21 |
| 9595599 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Tenko Yamashita | 2017-03-14 |
| 9583599 | Forming a fin using double trench epitaxy | Veeraraghavan S. Basker, Pouya Hashemi, Alexander Reznicek | 2017-02-28 |
| 9570298 | Localized elastic strain relaxed buffer | Veeraraghavan S. Basker, Oleg Gluschenkov, Alexander Reznicek | 2017-02-14 |
| 9558950 | Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-01-31 |
| 9537015 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2017-01-03 |