| 9530876 |
Strained semiconductor nanowire |
Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight |
2016-12-27 |
| 9496338 |
Wire-last gate-all-around nanowire FET |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2016-11-15 |
| 9496184 |
III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology |
Josephine B. Chang, Gen P. Lauer, Jeffrey W. Sleight |
2016-11-15 |
| 9466673 |
Complementary metal-oxide silicon having silicon and silicon germanium channels |
Gen P. Lauer, Alexander Reznicek, Jeffrey W. Sleight |
2016-10-11 |
| 9449820 |
Epitaxial growth techniques for reducing nanowire dimension and pitch |
Guy M. Cohen, Michael A. Guillorn, Jeffrey W. Sleight |
2016-09-20 |
| 9443949 |
Techniques for multiple gate workfunctions for a nanowire CMOS technology |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2016-09-13 |
| 9437613 |
Multiple VT in III-V FETs |
Josephine B. Chang, Amlan Majumdar, Jeffrey W. Sleight |
2016-09-06 |
| 9431301 |
Nanowire field effect transistor (FET) and method for fabricating the same |
Jack O. Chu, Szu-Lin Cheng, Kuen-Ting Shiu, Jeng-Bang Yau |
2016-08-30 |
| 9390980 |
III-V compound and germanium compound nanowire suspension with germanium-containing release layer |
Guy M. Cohen, Alexander Reznicek, Jeffrey W. Sleight |
2016-07-12 |
| 9391163 |
Stacked planar double-gate lamellar field-effect transistor |
Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Jeffrey W. Sleight |
2016-07-12 |
| 9385122 |
Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same |
Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau |
2016-07-05 |
| 9373638 |
Complementary metal-oxide silicon having silicon and silicon germanium channels |
Gen P. Lauer, Alexander Reznicek, Jeffrey W. Sleight |
2016-06-21 |
| 9368599 |
Graphene/nanostructure FET with self-aligned contact and gate |
Josephine B. Chang, Jeffrey W. Sleight |
2016-06-14 |
| 9362354 |
Tuning gate lengths in semiconductor device structures |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2016-06-07 |
| 9324801 |
Nanowire FET with tensile channel stressor |
Chung-Hsun Lin, Jeffrey W. Sleight |
2016-04-26 |
| 9299615 |
Multiple VT in III-V FETs |
Josephine B. Chang, Amlan Majumdar, Jeffrey W. Sleight |
2016-03-29 |
| 9287136 |
FinFET field-effect transistors with atomic layer doping |
Kevin K. Chan, Young-Hee Kim, Ramachandran Muralidhar, Dae-Gyu Park, Xinhui Wang +1 more |
2016-03-15 |
| 9281397 |
Semiconductor device including an asymmetric feature |
Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight |
2016-03-08 |
| 9263550 |
Gate to diffusion local interconnect scheme using selective replacement gate flow |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2016-02-16 |
| 9240326 |
Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact |
Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau |
2016-01-19 |
