| 9530689 |
Methods for fabricating integrated circuits using multi-patterning processes |
Deniz E. Civay, Jason E. Stephens, Jiong Li, Richard A. Farrell |
2016-12-27 |
$8,113,000 |
| 9520395 |
FinFET devices comprising a dielectric layer/CMP stop layer/hardmask/etch stop layer/gap-fill material stack |
Andy Wei, Xiang Hu, Jerome F. Wandell, Sandeep Gaan |
2016-12-13 |
$16,443,000 |
| 9508642 |
Self-aligned back end of line cut |
Andy Wei, Mark A. Zaleski |
2016-11-29 |
$4,439,000 |
| 9502528 |
Borderless contact formation through metal-recess dual cap integration |
Jason E. Stephens, Tuhin Guha Neogi, Mark A. Zaleski, Andy Wei |
2016-11-22 |
$8,427,000 |
| 9502293 |
Self-aligned via process flow |
Andy Wei, Sudharshanan Raghunthathan |
2016-11-22 |
$8,427,000 |
| 9490340 |
Methods of forming nanowire devices with doped extension regions and the resulting devices |
Shao-Ming Koh, Jing Wan, Andy Wei |
2016-11-08 |
$4,991,000 |
| 9461128 |
Method for creating self-aligned transistor contacts |
Mark A. Zaleski, Andy Wei, Jason E. Stephens, Tuhin Guha Neogi |
2016-10-04 |
$4,373,000 |
| 9460963 |
Self-aligned contacts and methods of fabrication |
Gabriel Padron Wells, Xiang Hu, Andre P. Labonte |
2016-10-04 |
$4,373,000 |
| 9455204 |
10 nm alternative N/P doped fin for SSRW scheme |
Huy Cao, Jinping Liu, Huang Liu |
2016-09-27 |
$3,712,000 |
| 9450074 |
LDMOS with field plate connected to gate |
Fanling H. Yang, Timothy K. McGuire, Sudarsan Uppili |
2016-09-20 |
$30,105,000 |
| 9443931 |
Fabricating stacked nanowire, field-effect transistors |
Hui Zang, Gabriel Padron Wells |
2016-09-13 |
$3,651,000 |
| 9431512 |
Methods of forming nanowire devices with spacers and the resulting devices |
Shao-Ming Koh, Jing Wan, Andy Wei |
2016-08-30 |
$3,218,000 |
| 9425097 |
Cut first alternative for 2D self-aligned via |
Andy Wei, Sudharshanan Raghunathan |
2016-08-23 |
$3,675,000 |
| 9412655 |
Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines |
Jason E. Stephens, Vikrant Chauhan, Andy Wei |
2016-08-09 |
$2,792,000 |
| 9406775 |
Method for creating self-aligned compact contacts in an IC device meeting fabrication spacing constraints |
Andy Wei, Youngtag Woo |
2016-08-02 |
$3,259,000 |
| 9397004 |
Methods for fabricating FinFET integrated circuits with simultaneous formation of local contact openings |
Erik Geiss, Scott Beasor, Andy Wei, Deniz E. Civay |
2016-07-19 |
$2,452,000 |
| 9390979 |
Opposite polarity borderless replacement metal contact scheme |
Andy Wei, Huy Cao, Jing Wan |
2016-07-12 |
$2,207,000 |
| 9362165 |
2D self-aligned via first process flow |
Andy Wei, Sudharshanan Raghunathan |
2016-06-07 |
$2,066,000 |
| 9305785 |
Semiconductor contacts and methods of fabrication |
Andy Wei, Gabriel Padron Wells, Xiang Hu |
2016-04-05 |
$1,295,000 |
| 9306019 |
Integrated circuits with nanowires and methods of manufacturing the same |
Jing Wan, Andy Wei, Shao-Ming Koh |
2016-04-05 |
$1,295,000 |
| 9293462 |
Integrated circuits with dual silicide contacts and methods for fabricating same |
Shao-Ming Koh, Jeremy A. Wahl, Andy Wei |
2016-03-22 |
$709,000 |
| 9276064 |
Fabricating stacked nanowire, field-effect transistors |
Hui Zang, Gabriel Padron Wells |
2016-03-01 |
$579,000 |
| 9275896 |
Methods for fabricating integrated circuits using directed self-assembly |
Deniz E. Civay, Ji Xu, Gerard Schmid, Richard A. Farrell |
2016-03-01 |
$579,000 |
| 9263325 |
Precut metal lines |
Andy Wei, Mark A. Zaleski |
2016-02-16 |
$417,000 |
| 9236437 |
Method for creating self-aligned transistor contacts |
Mark A. Zaleski, Andy Wei, Jason E. Stephens, Tuhin Guha Neogi |
2016-01-12 |
$510,000 |
