| 9520480 |
Normally off gallium nitride field effect transistors (FET) |
TingGang Zhu |
2016-12-13 |
| 9520464 |
Configuration and method to generate saddle junction electric field in edge termination |
Madhur Bobde, Lingpeng Guan, Hamza Yilmaz |
2016-12-13 |
| 9502503 |
Nanotube semiconductor devices |
Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang |
2016-11-22 |
| 9478646 |
Methods for fabricating anode shorted field stop insulated gate bipolar transistor |
Madhur Bobde, Yongping Ding, Xiaotian Zhang, Yueh-Se Ho |
2016-10-25 |
| 9466710 |
Source and body contact structure for trench-DMOS devices using polysilicon |
Francois Hebert |
2016-10-11 |
| 9455249 |
Planar srfet using no additional masks and layout method |
— |
2016-09-27 |
| 9450083 |
High voltage field balance metal oxide field effect transistor (FBM) |
Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Jun Hu, Jongoh Kim +1 more |
2016-09-20 |
| 9450050 |
Lateral super junctions with high substrate breakdown and build in avalanche clamp diode |
Madhur Bobde, Hamza Yilmaz, Wilson Ma, Lingping Guan, Yeeheng Lee +1 more |
2016-09-20 |
| 9443928 |
Oxide terminated trench MOSFET with three or four masks |
Sik Lui |
2016-09-13 |
| 9412684 |
Top exposed semiconductor chip package |
Yan Xun Xue, Yueh-Se Ho, Hamza Yilmaz, Jun Lu, Kai Liu |
2016-08-09 |
| 9406661 |
Protection circuit including vertical gallium nitride schottky diode and PN junction diode |
TingGang Zhu, Ping Huang, Yueh-Se Ho |
2016-08-02 |
| 9391061 |
Uni-directional transient voltage suppressor (TVS) |
Lingpeng Guan, Madhur Bobde |
2016-07-12 |
| 9356132 |
Integrating Schottky diode into power MOSFET |
Yi Su, Daniel Ng, Hong Chang, Jongoh Kim, John Chen |
2016-05-31 |
| 9355953 |
Vertical semiconductor MOSFET device with double substrate-side multiple electrode connections and encapsulation |
Tao Feng |
2016-05-31 |
| 9349796 |
Nanotube semiconductor devices |
Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang |
2016-05-24 |
| 9331068 |
Hybrid wide-bandgap semiconductor bipolar switches |
Leonid Fursin |
2016-05-03 |
| 9324858 |
Trench-gated MIS devices |
Dorman C. Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui |
2016-04-26 |
| 9324807 |
Silicon carbide MOSFET with integrated MOS diode |
Leonid Fursin |
2016-04-26 |
| 9318603 |
Method of making a low-Rdson vertical power MOSFET device |
Yi Su, Daniel Ng, Jun Lu |
2016-04-19 |
| 9312336 |
MOSFET device with reduced breakdown voltage |
Ji Pan |
2016-04-12 |
| 9281394 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Ji Pan +2 more |
2016-03-08 |
| 9257375 |
Multi-die semiconductor package |
Yi Su, David Grey |
2016-02-09 |
| 9245949 |
Nanotube semiconductor devices |
Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang |
2016-01-26 |
| 9236450 |
Fabrication of MOS device with schottky barrier controlling layer |
Xiaobin Wang, Ji Pan, Sung-Po Wei |
2016-01-12 |
| 9231050 |
Configuration and method to generate saddle junction electric field in edge termination |
Madhur Bobde, Lingping Guan, Hamza Yilmaz |
2016-01-05 |