Issued Patents 2016
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530885 | Normally on high voltage switch | Hamza Yilmaz, Daniel Calafut, Karthik Padmanabhan | 2016-12-27 |
| 9520464 | Configuration and method to generate saddle junction electric field in edge termination | Lingpeng Guan, Anup Bhalla, Hamza Yilmaz | 2016-12-13 |
| 9508805 | Termination design for nanotube MOSFET | Lingpeng Guan, Hamza Yilmaz, Karthik Padmanabhan | 2016-11-29 |
| 9502554 | High frequency switching MOSFETs with low output capacitance using a depletable P-shield | Hamza Yilmaz, Sik Lui, Daniel Ng | 2016-11-22 |
| 9484452 | Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs | Sik Lui, Hamza Yilmaz, Jongoh Kim, Daniel Ng | 2016-11-01 |
| 9484453 | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications | Hamza Yilmaz, Hong Chang, Yeeheng Lee, Daniel Calafut, Jongoh Kim +2 more | 2016-11-01 |
| 9478646 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Anup Bhalla, Yongping Ding, Xiaotian Zhang, Yueh-Se Ho | 2016-10-25 |
| 9461031 | Latch-up free vertical TVS diode array structure using trench isolation | — | 2016-10-04 |
| 9450045 | Method for forming lateral super-junction structure | Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz | 2016-09-20 |
| 9450050 | Lateral super junctions with high substrate breakdown and build in avalanche clamp diode | Anup Bhalla, Hamza Yilmaz, Wilson Ma, Lingping Guan, Yeeheng Lee +1 more | 2016-09-20 |
| 9450083 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Lingpeng Guan, Jun Hu, Jongoh Kim +1 more | 2016-09-20 |
| 9450088 | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices | Yeeheng Lee, Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz +2 more | 2016-09-20 |
| 9431495 | Method of forming SGT MOSFETs with improved termination breakdown voltage | Yongping Ding, Yeeheng Lee, Xiaobin Wang | 2016-08-30 |
| 9425304 | Transistor structure with improved unclamped inductive switching immunity | Wenjie Zhang, Qufei Chen, Kyle Terrill | 2016-08-23 |
| 9397154 | Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area | Karthik Padmanabhan | 2016-07-19 |
| 9391061 | Uni-directional transient voltage suppressor (TVS) | Lingpeng Guan, Anup Bhalla | 2016-07-12 |
| 9356022 | Semiconductor device with termination structure for power MOSFET applications | Yeeheng Lee, Daniel Calafut, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more | 2016-05-31 |
| 9318587 | Injection control in semiconductor power devices | Jun Hu, Lingpeng Guan, Hamza Yilmaz, Lei Zhang, Jongoh Kim | 2016-04-19 |
| 9312381 | Lateral super-junction MOSFET device and termination structure | Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz | 2016-04-12 |
| 9281394 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Anup Bhalla, Ji Pan +2 more | 2016-03-08 |
| 9281368 | Split-gate trench power MOSFET with protected shield oxide | Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more | 2016-03-08 |
| 9252264 | High frequency switching MOSFETs with low output capacitance using a depletable P-shield | Hamza Yilmaz, Sik Lui, Daniel Ng | 2016-02-02 |
| 9231050 | Configuration and method to generate saddle junction electric field in edge termination | Lingping Guan, Anup Bhalla, Hamza Yilmaz | 2016-01-05 |