| 9484451 |
MOSFET active area and edge termination area charge balance |
Qufei Chen, Sharon Shi |
2016-11-01 |
| 9443959 |
Transistor structure with feed-through source-to-substrate contact |
— |
2016-09-13 |
| 9443974 |
Super junction trench power MOSFET device fabrication |
Yang Gao, Deva Pattanayak, Kuo-In Chen, The-Tu Chau, Sharon Shi +1 more |
2016-09-13 |
| 9431530 |
Super-high density trench MOSFET |
Robert Xu, Kuo-In Chen, Karl Lichtenberger, Sharon Shi, Qufei Chen |
2016-08-30 |
| 9431550 |
Trench polysilicon diode |
Qufei Chen, Robert Xu, Deva Pattanayak |
2016-08-30 |
| 9425306 |
Super junction trench power MOSFET devices |
Yang Gao, Deva Pattanayak, Kuo-In Chen, The-Tu Chau, Sharon Shi +1 more |
2016-08-23 |
| 9425304 |
Transistor structure with improved unclamped inductive switching immunity |
Wenjie Zhang, Madhur Bobde, Qufei Chen |
2016-08-23 |
| 9425305 |
Structures of and methods of fabricating split gate MIS devices |
Yang Gao, Chanho Park |
2016-08-23 |
| 9419129 |
Split gate semiconductor device with curved gate oxide profile |
Yang Gao, Kuo-In Chen, Sharon Shi |
2016-08-16 |
| 9306056 |
Semiconductor device with trench-like feed-throughs |
Deva Pattanayak, King Owyang, Mohammed Kasem, Reuven Katraro, Kuo-In Chen +5 more |
2016-04-05 |
| 9230810 |
System and method for substrate wafer back side and edge cross section seals |
Hamilton Lu, The-Tu Chau, Deva Pattanayak, Sharon Shi, Kuo-In Chen +1 more |
2016-01-05 |