| 9502503 |
Nanotube semiconductor devices |
Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang |
2016-11-22 |
| 9450843 |
Method for indicating port states and switch |
Guolang Li, Xiang Zhou, Xizhi Jia |
2016-09-20 |
| 9443577 |
Voltage-switched magnetic random access memory (MRAM) and method for using the same |
Zihui Wang, Huadong Gan, Yuchen Zhou, Yiming Huai |
2016-09-13 |
| 9431495 |
Method of forming SGT MOSFETs with improved termination breakdown voltage |
Yongping Ding, Yeeheng Lee, Madhur Bobde |
2016-08-30 |
| 9356022 |
Semiconductor device with termination structure for power MOSFET applications |
Yeeheng Lee, Madhur Bobde, Daniel Calafut, Hamza Yilmaz, Ji Pan +2 more |
2016-05-31 |
| 9349796 |
Nanotube semiconductor devices |
Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang |
2016-05-24 |
| 9306154 |
Magnetic random access memory with perpendicular enhancement layer |
Huadong Gan, Zihui Wang, Yiming Huai, Yuchen Zhou, Bing K. Yen +1 more |
2016-04-05 |
| 9245949 |
Nanotube semiconductor devices |
Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang |
2016-01-26 |
| 9236450 |
Fabrication of MOS device with schottky barrier controlling layer |
Anup Bhalla, Ji Pan, Sung-Po Wei |
2016-01-12 |
| 9231027 |
Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang |
2016-01-05 |
