YH

Yiming Huai

AT Avalanche Technology: 17 patents #1 of 19Top 6%
Overall (2016): #1,970 of 481,213Top 1%
17
Patents 2016

Issued Patents 2016

Patent #TitleCo-InventorsDate
9502092 Unipolar-switching perpendicular MRAM and method for using same Yuchen Zhou, Zihui Wang, Ebrahim Abedifard, Xiaojie Hao 2016-11-22
9496489 Magnetic random access memory with multilayered seed structure Huadong Gan, Yuchen Zhou 2016-11-15
9472595 Perpendicular MRAM with magnet Yuchen Zhou, Bing K. Yen, Ebrahim Abedifard 2016-10-18
9443577 Voltage-switched magnetic random access memory (MRAM) and method for using the same Zihui Wang, Xiaobin Wang, Huadong Gan, Yuchen Zhou 2016-09-13
9444039 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Roger Klas Malmhall 2016-09-13
9444038 Magnetic random access memory with nickel/transition metal multilayered seed structure Huadong Gan, Bing K. Yen, Roger Klas Malmhall, Yuchen Zhou 2016-09-13
9419210 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Roger Klas Malmhall 2016-08-16
9419207 Magnetic random access memory with multilayered seed structure Huadong Gan, Yuchen Zhou 2016-08-16
9396781 Magnetic random access memory having perpendicular composite reference layer Yuchen Zhou, Zihui Wang, Huadong Gan 2016-07-19
9373663 Landing pad in peripheral circuit for magnetic random access memory (MRAM) Kimihiro Satoh 2016-06-21
9349427 Method for screening arrays of magnetic memories Yuchen Zhou, Ebrahim Abedifard 2016-05-24
9337417 Magnetic random access memory with perpendicular interfacial anisotropy Huadong Gan, Zihui Wang, Yuchen Zhou 2016-05-10
9318179 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Roger Klas Malmhall 2016-04-19
9306154 Magnetic random access memory with perpendicular enhancement layer Huadong Gan, Zihui Wang, Xiaobin Wang, Yuchen Zhou, Bing K. Yen +1 more 2016-04-05
9251879 Perpendicular magnetic random access memory (MRAM) device with reference cell and method for using same Yuchen Zhou 2016-02-02
9252187 Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips Zihui Wang, Yuchen Zhou 2016-02-02
9231027 Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer Huadong Gan, Xiaobin Wang, Yuchen Zhou, Zihui Wang 2016-01-05