FF

Frank Feustel

AM AMD: 7 patents #9 of 913Top 1%
Globalfoundries: 7 patents #3 of 305Top 1%
📍 Dresden, DE: #1 of 273 inventorsTop 1%
Overall (2011): #1,645 of 364,097Top 1%
14
Patents 2011

Issued Patents 2011

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
8080866 3-D integrated semiconductor device comprising intermediate heat spreading capabilities Thomas Werner, Michael Grillberger 2011-12-20
8048811 Method for patterning a metallization layer by reducing resist strip induced damage of the dielectric material Thomas Werner, Juergen Boemmels 2011-11-01
8048736 Semiconductor device comprising a capacitor in the metallization system and a method of forming the capacitor Thomas Werner, Kai Frohberg 2011-11-01
8040497 Method and test structure for estimating focus settings in a lithography process based on CD measurements Thomas Werner, Kai Frohberg 2011-10-18
8039398 Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices Robert Seidel, Juergen Boemmels 2011-10-18
8030209 Enhancing structural integrity of low-k dielectrics in metallization systems of semiconductor devices by using a crack suppressing material layer Thomas Werner, Kai Frohberg 2011-10-04
7989352 Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics Kai Frohberg, Thomas Werner 2011-08-02
7977237 Fabricating vias of different size of a semiconductor device by splitting the via patterning process Thomas Werner, Kai Frohberg 2011-07-12
7955962 Method of reducing contamination by providing a removable polymer protection film during microstructure processing Ralf Richter, Thomas Werner, Kai Frohberg 2011-06-07
7932166 Field effect transistor having a stressed contact etch stop layer with reduced conformality Kai Frohberg, Thomas Werner 2011-04-26
7928004 Nano imprint technique with increased flexibility with respect to alignment and feature shaping Robert Seidel, Carsten Peters 2011-04-19
7915170 Reducing contamination of semiconductor substrates during beol processing by providing a protection layer at the substrate edge Su Ruo Qing, Carsten Peters 2011-03-29
7910496 Technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced lines Kai Frohberg, Carsten Peters 2011-03-22
7879709 Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure Tobias Letz, Carsten Peters 2011-02-01