Issued Patents 2011
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8067822 | Integrated circuit package for semiconductor devices with improved electric resistance and inductance | Leeshawn Luo, Yueh-Se Ho, Sik Lui, Mike F. Chang | 2011-11-29 |
| 8058727 | Standing chip scale package | Tao Feng, Yueh-Se Ho | 2011-11-15 |
| 8053298 | Planar split-gate high-performance MOSFET structure and manufacturing method | Francois Hebert, Daniel Ng | 2011-11-08 |
| 8053891 | Standing chip scale package | Tao Feng, Yueh-Se Ho | 2011-11-08 |
| 8053808 | Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device | Yi Su, Daniel Ng, Wei-Chuan Wang, Ji Pan | 2011-11-08 |
| 8049315 | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package | Jun Lu, Xiaobin Wang, Allen Timothy Chang, Kenny Hu, Xiaotian Zhang | 2011-11-01 |
| 8035159 | Device structure and manufacturing method using HDP deposited source-body implant block | Francois Hebert, Sung-Shan Tai, Sik Lui | 2011-10-11 |
| 8021563 | Etch depth determination for SGT technology | Yingying Lou, Tiesheng Li, Yu Wang | 2011-09-20 |
| 8008747 | High power and high temperature semiconductor power devices protected by non-uniform ballasted sources | Francois Hebert | 2011-08-30 |
| 8008716 | Inverted-trench grounded-source FET structure with trenched source body short electrode | Sik Lui, Francois Hebert | 2011-08-30 |
| 8008151 | Shallow source MOSFET | Sung-Shan Tai, Tiesheng Li, Hong Chang, Moses Ho | 2011-08-30 |
| 7960233 | MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification | Sik Lui | 2011-06-14 |
| 7952144 | Integration of a sense FET into a discrete power MOSFET | Yi Su, Daniel Ng | 2011-05-31 |
| 7952139 | Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout | Xiaobin Wang, Moses Ho | 2011-05-31 |
| 7948029 | MOS device with varying trench depth | Xiaobin Wang | 2011-05-24 |
| 7943989 | Nano-tube MOSFET technology and devices | Hamza Yilmaz, Daniel Ng, Lingpeng Guan, Wilson Ma, Moses Ho +1 more | 2011-05-17 |
| 7939882 | Integration of sense FET into discrete power MOSFET | Yi Su | 2011-05-10 |
| 7936011 | Shielded gate trench (SGT) MOSFET devices and manufacturing processes | Sik Lui | 2011-05-03 |
| 7923774 | Power MOS device with conductive contact layer | Sik Lui, Tiesheng Li | 2011-04-12 |
| 7910486 | Method for forming nanotube semiconductor devices | Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang | 2011-03-22 |
| 7902604 | Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection | Yi Su, Daniel Ng | 2011-03-08 |
| 7884454 | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package | Jun Lu, Xiaobin Wang, Allen Timothy Chang, Man Sheng Hu, Xiaotian Zhang | 2011-02-08 |
| 7879676 | High density trench mosfet with single mask pre-defined gate and contact trenches | Yeeheng Lee, Hong Chang, Tiesheng Li, John Chen | 2011-02-01 |
| 7875541 | Shallow source MOSFET | Sung-Shan Tai, Tiesheng Li, Hong Chang, Moses Ho | 2011-01-25 |
| 7868381 | Structures of and methods of fabricating trench-gated MIS devices | Domon Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui | 2011-01-11 |