Issued Patents 2011
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8063442 | Power device with improved edge termination | Daniel Calafut | 2011-11-22 |
| 8043913 | Method of forming trench-gate field effect transistors | Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2011-10-25 |
| 7951688 | Method and structure for dividing a substrate into individual devices | Minhua Li, Qi Wang, Gordon Sim, Matthew Reynolds, Suku Kim +1 more | 2011-05-31 |
| 7943989 | Nano-tube MOSFET technology and devices | Daniel Ng, Lingpeng Guan, Anup Bhalla, Wilson Ma, Moses Ho +1 more | 2011-05-17 |
| 7923776 | Trench-gate field effect transistor with channel enhancement region and methods of forming the same | Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more | 2011-04-12 |
| 7910486 | Method for forming nanotube semiconductor devices | Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang | 2011-03-22 |
| 7884390 | Structure and method of forming a topside contact to a backside terminal of a semiconductor device | John T. Andrews, Bruce D. Marchant, Ihsiu Ho | 2011-02-08 |
| 7867855 | Method of fabricating high voltage semiconductor devices with JFET regions containing dielectrically isolated junctions | — | 2011-01-11 |
| 7863708 | Power device edge termination having a resistor with one end biased to source voltage | Daniel Calafut | 2011-01-04 |