Issued Patents 2004
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835664 | Methods of forming trenched isolation regions | Demetrius Sarigiannis, Garo Derderian | 2004-12-28 |
| 6833576 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Mark Visokay +1 more | 2004-12-21 |
| 6812112 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Mark Visokay, Thomas M. Graettinger, Steven D. Cummings | 2004-11-02 |
| 6812110 | Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials | F. Daniel Gealy, Gurtej S. Sandhu | 2004-11-02 |
| 6784083 | Method for reducing physisorption during atomic layer deposition | F. Gealy | 2004-08-31 |
| 6785120 | Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide | F. Daniel Gealy, Gurtej S. Sandhu | 2004-08-31 |
| 6781864 | System and method for inhibiting imprinting of capacitor structures of a memory | F. Daniel Gealy | 2004-08-24 |
| 6780766 | Methods of forming regions of differing composition over a substrate | Garo Derderian | 2004-08-24 |
| 6767823 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers | Irina Vasilyeva, Ammar Derraa, Philip Campbell, Gurtej S. Sandhu | 2004-07-27 |
| 6767806 | METHOD OF FORMING A PATTERNED SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL, AND METHOD OF FORMING A CAPACITOR HAVING A CAPACITOR DIELECTRIC REGION COMPRISING SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL | Garo Derderian, Mark Visokay, John M. Drynan, Gurtej S. Sandhu | 2004-07-27 |
| 6764943 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Mark Visokay, Thomas M. Graettinger, Steven D. Cummings | 2004-07-20 |
| 6759330 | Method of providing a structure using self-aligned features | Dinesh Chopra, Kevin G. Donohoe | 2004-07-06 |
| 6753618 | MIM capacitor with metal nitride electrode materials and method of formation | Thomas M. Graettinger | 2004-06-22 |
| 6753271 | Atomic layer deposition methods | Demetrius Sarigiannis, Garo Derderian, Gurtej S. Sandhu, F. Daniel Gealy, Chris M. Carlson | 2004-06-22 |
| 6734051 | Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates | Irina Vasilyeva, Ammar Derraa, Philip Campbell, Gurtej S. Sandhu | 2004-05-11 |
| 6730355 | Chemical vapor deposition method of forming a material over at least two substrates | Ammar Derraa, Irina Vasilyeva, Philip Campbell, Gurtej S. Sandhu | 2004-05-04 |
| 6727140 | Capacitor with high dielectric constant materials and method of making | Gurtej S. Sandhu, Sam Yang | 2004-04-27 |
| 6720607 | Method for improving the resistance degradation of thin film capacitors | Husam N. Al-Shareef | 2004-04-13 |
| 6696716 | Structures and methods for enhancing capacitors in integrated ciruits | Gurtej S. Sandhu | 2004-02-24 |
| 6682969 | Top electrode in a strongly oxidizing environment | Howard E. Rhodes, Gurtej S. Sandhu, F. Daniel Gealy, Thomas M. Graettinger | 2004-01-27 |
| 6673701 | Atomic layer deposition methods | Eugene P. Marsh, Brian A. Vaartstra, Paul Castrovillo, Garo Derderian, Gurtej S. Sandhu | 2004-01-06 |
| 6673669 | Method of reducing oxygen vacancies and DRAM processing method | Gurtej S. Sandhu | 2004-01-06 |