MV

Mark Visokay

TI Texas Instruments: 11 patents #7 of 1,271Top 1%
Micron: 5 patents #168 of 948Top 20%
📍 Dallas, TX: #2 of 508 inventorsTop 1%
🗺 Texas: #25 of 8,731 inventorsTop 1%
Overall (2004): #354 of 270,089Top 1%
17
Patents 2004

Issued Patents 2004

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
6835639 Multiple work function gates Antonio Luis Pacheco Rotondaro 2004-12-28
6833576 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Cem Basceri +1 more 2004-12-21
6828200 Multistage deposition that incorporates nitrogen via an intermediate step James Joseph Chambers, Luigi Colombo 2004-12-07
6821873 Anneal sequence for high-&kgr; film property optimization Luigi Colombo, Antonio Luis Pacheco Rotondaro 2004-11-23
6812112 Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers Cem Basceri, Thomas M. Graettinger, Steven D. Cummings 2004-11-02
6809370 High-k gate dielectric with uniform nitrogen profile and methods for making the same Luigi Colombo, Manuel Quevedo-Lopez, James Joseph Chambers, Antonio Luis Pacheco Rotondaro 2004-10-26
6809394 Dual metal-alloy nitride gate electrodes 2004-10-26
6797599 Gate structure and method Antonio Rotondaro, Luigi Colombo 2004-09-28
6794252 Method and system for forming dual work function gate electrodes in a semiconductor device Antonio Luis Pacheco Rotondaro 2004-09-21
6783997 Gate structure and method Antonio Rotondaro, Luigi Colombo 2004-08-31
6781175 Rhodium-rich integrated circuit capacitor electrode Haining Yang, Dan Gealy, Gurtej S. Sandhu, Howard E. Rhodes 2004-08-24
6770521 Method of making multiple work function gates by implanting metals with metallic alloying additives Antonio Luis Pacheco Rotondaro, Luigi Colombo 2004-08-03
6767806 METHOD OF FORMING A PATTERNED SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL, AND METHOD OF FORMING A CAPACITOR HAVING A CAPACITOR DIELECTRIC REGION COMPRISING SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL Cem Basceri, Garo Derderian, John M. Drynan, Gurtej S. Sandhu 2004-07-27
6764943 Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers Cem Basceri, Thomas M. Graettinger, Steven D. Cummings 2004-07-20
6750126 Methods for sputter deposition of high-k dielectric films James Joseph Chambers, Luigi Colombo, Antonio Luis Pacheco Rotondaro 2004-06-15
6740554 Methods to form rhodium-rich oxygen barriers Haining Yang, Dan Gealy, Gurtej S. Sandhu, Howard E. Rhodes 2004-05-25
6696332 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing Antonio Luis Pacheco Rotondaro, Luigi Colombo 2004-02-24