Issued Patents 2004
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6828623 | Floating gate memory device with homogeneous oxynitride tunneling dielectric | Xin Guo, Nian Yang | 2004-12-07 |
| 6825526 | Structure for increasing drive current in a memory array and related method | Yue-Song He, Nian Yang | 2004-11-30 |
| 6822259 | Method of detecting and distinguishing stack gate edge defects at the source or drain junction | Nian Yang, Xin Guo | 2004-11-23 |
| 6818462 | METHOD OF DETERMINING THE ACTIVE REGION WIDTH BETWEEN SHALLOW TRENCH ISOLATION STRUCTURES USING A C-V MEASUREMENT TECHNIQUE FOR FABRICATING A FLASH MEMORY SEMICONDUCTOR DEVICE AND A DEVICE THEREBY FORMED | Tien-Chun Yang, Nian Yang | 2004-11-16 |
| 6812514 | High density floating gate flash memory and fabrication processes therefor | Nian Yang, Hyeon-Seag Kim | 2004-11-02 |
| 6808945 | Method and system for testing tunnel oxide on a memory-related structure | Hsiao-Han Thio, Nian Yang | 2004-10-26 |
| 6797650 | Flash memory devices with oxynitride dielectric as the charge storage media | Nian Yang, John Jianshi Wang, Jiang Li | 2004-09-28 |
| 6777957 | Test structure to measure interlayer dielectric effects and breakdown and detect metal defects in flash memories | Nian Yang, John Jianshi Wang | 2004-08-17 |
| 6759295 | METHOD OF DETERMINING THE ACTIVE REGION WIDTH BETWEEN SHALLOW TRENCH ISOLATION STRUCTURES USING A GATE CURRENT MEASUREMENT TECHNIQUE FOR FABRICATING A FLASH MEMORY SEMICONDUCTOR DEVICE AND DEVICE THEREBY FORMED | Tien-Chun Yang, Nian Yang | 2004-07-06 |
| 6756806 | Method of determining location of gate oxide breakdown of MOSFET by measuring currents | Nian Yang, Tien-Chun Yang | 2004-06-29 |
| 6754109 | Method of programming memory cells | Richard Fastow, Sameer Haddad, Sheung-Hee Park | 2004-06-22 |
| 6751146 | System and method for charge restoration in a non-volatile memory device | Jianshi Wang, Imran Khan | 2004-06-15 |
| 6731130 | Method of determining gate oxide thickness of an operational MOSFET | Nian Yang, Tien-Chun Yang | 2004-05-04 |
| 6717850 | Efficient method to detect process induced defects in the gate stack of flash memory devices | Jiang Li, Nian Yang, John Jianshi Wang | 2004-04-06 |
| 6716710 | Using a first liner layer as a spacer in a semiconductor device | Hsiao-Han Thio, Nian Yang | 2004-04-06 |
| 6696331 | Method of protecting a stacked gate structure during fabrication | Nian Yang, Hsiao-Han Thio | 2004-02-24 |
| 6689666 | Replacing a first liner layer with a thicker oxide layer when forming a semiconductor device | Hsiao-Han Thio, Nian Yang | 2004-02-10 |
| 6677442 | Nucleic acid encoding human REV1 protein | Wensheng Lin, Hua Xin, Xiaohua Wu | 2004-01-13 |