Issued Patents 2004
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6825684 | Hot carrier oxide qualification method | Hyeon-Seag Kim, Amit P. Marathe, Nian Yang | 2004-11-30 |
| 6825083 | Method for reducing shallow trench isolation edge thinning on thin gate oxides to improve peripheral transistor reliability and performance for high performance flash memory devices | Nian Yang, John Jianshi Wang, Xin Guo | 2004-11-30 |
| 6818462 | METHOD OF DETERMINING THE ACTIVE REGION WIDTH BETWEEN SHALLOW TRENCH ISOLATION STRUCTURES USING A C-V MEASUREMENT TECHNIQUE FOR FABRICATING A FLASH MEMORY SEMICONDUCTOR DEVICE AND A DEVICE THEREBY FORMED | Nian Yang, Zhigang Wang | 2004-11-16 |
| 6784682 | Method of detecting shallow trench isolation corner thinning by electrical trapping | Nian Yang, Hyeon-Seag Kim | 2004-08-31 |
| 6759295 | METHOD OF DETERMINING THE ACTIVE REGION WIDTH BETWEEN SHALLOW TRENCH ISOLATION STRUCTURES USING A GATE CURRENT MEASUREMENT TECHNIQUE FOR FABRICATING A FLASH MEMORY SEMICONDUCTOR DEVICE AND DEVICE THEREBY FORMED | Nian Yang, Zhigang Wang | 2004-07-06 |
| 6756806 | Method of determining location of gate oxide breakdown of MOSFET by measuring currents | Nian Yang, Zhigang Wang | 2004-06-29 |
| 6734080 | Semiconductor isolation material deposition system and method | Nian Yang, John Jianshi Wang | 2004-05-11 |
| 6734028 | Method of detecting shallow trench isolation corner thinning by electrical stress | Nian Yang, Hyeon-Seag Kim | 2004-05-11 |
| 6731130 | Method of determining gate oxide thickness of an operational MOSFET | Nian Yang, Zhigang Wang | 2004-05-04 |
| 6728160 | Path gate driver circuit | Kurihara Kazuhiro, Pau-Ling Chen | 2004-04-27 |