Issued Patents 2003
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6667900 | Method and apparatus to operate a memory cell | Daniel Xu | 2003-12-23 |
| 6632736 | Method of forming low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Trung T. Doan | 2003-10-14 |
| 6625054 | Method and apparatus to program a phase change memory | Manzur Gill | 2003-09-23 |
| 6624517 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Trung T. Doan | 2003-09-23 |
| 6617192 | Electrically programmable memory element with multi-regioned contact | Stephen J. Hudgens, Patrick Klersy | 2003-09-09 |
| 6608773 | Programmable resistance memory array | Guy Wicker | 2003-08-19 |
| 6607944 | Method of making memory cell arrays | Luan C. Tran, D. Mark Duncan, Rob B. Kerr, Kris K. Brown | 2003-08-19 |
| 6600190 | Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions | Luan C. Tran, Alan R. Reinberg, D. Mark Durcan | 2003-07-29 |
| 6600191 | Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby | Shubneesh Batra | 2003-07-29 |
| 6599800 | Methods of forming capacitors, and methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions | Luan C. Tran, Alan R. Reinberg, Mark Durcan | 2003-07-29 |
| 6590807 | Method for reading a structural phase-change memory | — | 2003-07-08 |
| 6586761 | Phase change material memory device | — | 2003-07-01 |
| 6576921 | Isolating phase change material memory cells | — | 2003-06-10 |
| 6570784 | Programming a phase-change material memory | — | 2003-05-27 |
| 6567296 | Memory device | Giulio Casagrande, Roberto Bez, Guy Wicker, Edward J. Spall, Stephen J. Hudgens +1 more | 2003-05-20 |
| 6567293 | Single level metal memory cell using chalcogenide cladding | Manzur Gill | 2003-05-20 |
| 6563164 | Compositionally modified resistive electrode | Daniel Xu, Chien-Chih Chiang, Patrick J. Neschleba | 2003-05-13 |
| 6555860 | Compositionally modified resistive electrode | Stephen J. Hudgens, Patrick Klersy | 2003-04-29 |
| 6555463 | Methods of fabricating buried digit lines | — | 2003-04-29 |
| 6548390 | SEMICONDUCTOR PROCESSING METHODS OF FORMING CONTACT OPENINGS, METHODS OF FORMING MEMORY CIRCUITRY, METHODS OF FORMING ELECTRICAL CONNECTIONS, AND METHODS OF FORMING DYNAMIC RANDOM ACCESS MEMORY (DRAM) CIRCUITRY | Pai-Hung Pan, Luan C. Tran | 2003-04-15 |
| 6545907 | Technique and apparatus for performing write operations to a phase change material memory device | Ward Parkinson, Manzur Gill | 2003-04-08 |
| 6531373 | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements | Manzur Gill | 2003-03-11 |
| 6511867 | Utilizing atomic layer deposition for programmable device | Charles H. Dennison | 2003-01-28 |
| 6511862 | Modified contact for programmable devices | Stephen J. Hudgens | 2003-01-28 |
| 6509250 | Method for CMOS well drive in a non-inert ambient | J. Brett Rolfson, Fernando Gonzalez, W. Richard Barbour | 2003-01-21 |