Issued Patents 2002
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6472751 | H2 diffusion barrier formation by nitrogen incorporation in oxide layer | Robert Chen, Jeffrey A. Shields, Khanh Tran | 2002-10-29 |
| 6410409 | Implanted barrier layer for retarding upward diffusion of substrate dopant | Mark I. Gardner, H. Jim Fulford, Frederick N. Hause, Mark W. Michael, Bradley T. Moore +1 more | 2002-06-25 |
| 6399493 | Method of silicide formation by silicon pretreatment | Jon D. Cheek, John G. Pellerin | 2002-06-04 |
| 6380055 | Dopant diffusion-retarding barrier region formed within polysilicon gate layer | Mark I. Gardner, H. Jim Fulford, Frederick N. Hause, Mark W. Michael, Bradley T. Moore +1 more | 2002-04-30 |
| 6376330 | Dielectric having an air gap formed between closely spaced interconnect lines | H. Jim Fulford, Fred N. Hause, Basab Bandyopadhyay, Mark W. Michael, William S. Brennan | 2002-04-23 |
| 6372588 | Method of making an IGFET using solid phase diffusion to dope the gate, source and drain | Derick J. Wristers, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause, Mark W. Michael +1 more | 2002-04-16 |
| 6353253 | Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization | Fred N. Hause, Basab Bandyopadhyay, H. Jim Fulford, Mark W. Michael, William S. Brennan | 2002-03-05 |