SY

Simon Shi-Ning Yang

YC Yangtze Memory Technologies Co.: 19 patents #45 of 626Top 8%
IN Intel: 17 patents #2,418 of 30,777Top 8%
CM Chartered Semiconductor Manufacturing: 2 patents #256 of 840Top 35%
S( Semiconductor Manufacturing International (Shanghai): 1 patents #561 of 1,122Top 50%
📍 Hubei, OR: #1 of 4 inventorsTop 25%
Overall (All Time): #78,965 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 26–40 of 40 patents

Patent #TitleCo-InventorsDate
6740427 Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same Madhav Datta, Dave Emory, Tzeun-luh Huang, Subhash M. Joshi, Christine A. King +4 more 2004-05-25
6593633 Method and device for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2003-07-15
6566727 N2O nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stress Reza Arghavani, Robert S. Chau, John Graham 2003-05-20
6521964 Device having spacers for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2003-02-18
6509618 Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2003-01-21
6506652 Method of recessing spacers to improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2003-01-14
6271096 Method and device for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2001-08-07
6268254 Method and device for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2001-07-31
6261925 N2O Nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stress Reza Arghavani, Robert S. Chau, John Graham 2001-07-17
6251762 Method and device for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2001-06-26
6235598 Method of using thick first spacers to improve salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2001-05-22
6188117 Method and device for improved salicide resistance on polysilicon gates Chia-Hong Jan, Julie Tsai, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more 2001-02-13
5780346 N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation structure Reza Arghavani, Robert S. Chau, John Graham 1998-07-14
5289035 Tri-layer titanium coating for an aluminum layer of a semiconductor device Melton C. Bost, Yeochung Yen, Jim Baldo, Barbara Greenebaum 1994-02-22
5231053 Process of forming a tri-layer titanium coating for an aluminum layer of a semiconductor device Melton C. Bost, Yeochung Yen, Jim Baldo, Barbara Greenebaum 1993-07-27