Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9331163 | Transistor with diamond gate | Andrew D. Koehler, Travis J. Anderson, Marko J. Tadjer, Tatyana I. Feygelson | 2016-05-03 |
| 9305858 | Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates | Marko J. Tadjer, Tatyana I. Feygelson, Bradford B. Pate, Travis J. Anderson | 2016-04-05 |
| 9275998 | Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel | Francis J. Kub, Travis J. Anderson, Andrew D. Koehler | 2016-03-01 |
| 9246305 | Light-emitting devices with integrated diamond | Francis J. Kub, Travis J. Anderson | 2016-01-26 |
| 9196614 | Inverted III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Travis J. Anderson, Andrew D. Koehler | 2015-11-24 |
| 9196703 | Selective deposition of diamond in thermal vias | Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell, Andrew D. Koehler +8 more | 2015-11-24 |
| 9159641 | Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates | Marko J. Tadjer, Tatyana I. Feygelson, Bradford B. Pate, Travis J. Anderson | 2015-10-13 |
| 9029833 | Graphene on semiconductor detector | Francis J. Kub, Travis J. Anderson | 2015-05-12 |
| 9006791 | III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Travis J. Anderson, Andrew D. Koehler | 2015-04-14 |
| 8900939 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr. | 2014-12-02 |
| 8872159 | Graphene on semiconductor detector | Francis J. Kub, Travis J. Anderson | 2014-10-28 |
| 8753468 | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates | Joshua D. Caldwell, Travis J. Anderson, Francis J. Kub | 2014-06-17 |
| 8723218 | Silicon carbide rectifier | Francis J. Kub, Mario Ancona, Eugene A. Imhoff | 2014-05-13 |
| 8648390 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Charles R. Eddy, Jr., Michael A. Mastro, Travis J. Anderson | 2014-02-11 |
| 8445383 | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices | Tatyana I. Feygelson, Marko J. Tadjer, Joshua D. Caldwell, Kendrick X Liu, Francis J. Kub +2 more | 2013-05-21 |
| 8384129 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Charles R. Eddy, Jr., Michael A. Mastro, Travis J. Anderson | 2013-02-26 |
| 8039301 | Gate after diamond transistor | Francis J. Kub | 2011-10-18 |
| 8008626 | Neutron detector with gamma ray isolation | Francis J. Kub, Bernard F. Phlips, Eric A. Wulf | 2011-08-30 |
| 7915143 | Method of mediating forward voltage drift in a SiC device | Joshua D. Caldwell, Robert E. Stahlbush, Marko J. Tadjer, Orest J. Glembocki | 2011-03-29 |
| 7902513 | Neutron detector with gamma ray isolation | Francis J. Kub, Bernard F. Phlips, Eric A. Wulf | 2011-03-08 |
| 7759186 | Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices | Eugene A. Imhoff, Francis J. Kub | 2010-07-20 |
| 7535100 | Wafer bonding of thinned electronic materials and circuits to high performance substrates | Francis J. Kub | 2009-05-19 |
| 7358152 | Wafer bonding of thinned electronic materials and circuits to high performance substrate | Francis J. Kub | 2008-04-15 |
| 7303969 | Method of making interband tunneling diodes | Paul R. Berger, Phillip E. Thompson, Roger Lake, Sean L. Rommel | 2007-12-04 |
| 7282753 | Vertical conducting power semiconducting devices made by deep reactive ion etching | Francis J. Kub | 2007-10-16 |