Issued Patents All Time
Showing 326–350 of 391 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5517457 | Semiconductor memory device | Koji Sakui, Hiroshi Nakamura, Tomoharu Tanaka, Masaki Momodomi, Takehiro Hasegawa | 1996-05-14 |
| 5508957 | Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through | Masaki Momodomi, Yasuo Itoh, Hiroshi Iwahashi, Yoshihisa Iwata, Masahiko Chiba +6 more | 1996-04-16 |
| 5467303 | Semiconductor memory device having register groups for writing and reading data | Takehiro Hasegawa, Shigeyoshi Watanabe | 1995-11-14 |
| 5453955 | Non-volatile semiconductor memory device | Koji Sakui, Hiroshi Nakamura, Masaki Momodomi, Riichiro Shirota | 1995-09-26 |
| 5440509 | Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines | Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Masahiko Chiba +3 more | 1995-08-08 |
| 5400279 | Nonvolatile semiconductor memory device with NAND cell structure | Masaki Momodomi, Yasuo Itoh, Yoshihisa Iwata, Masahiko Chiba | 1995-03-21 |
| 5371024 | Semiconductor device and process for manufacturing the same | Katsuhiko Hieda, Fumio Horiguchi, Hiroshi Takato | 1994-12-06 |
| 5323039 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1994-06-21 |
| 5313420 | Programmable semiconductor memory | — | 1994-05-17 |
| 5258635 | MOS-type semiconductor integrated circuit device | Akihiro Nitayama, Hiroshi Takato, Fumio Horiguchi | 1993-11-02 |
| 5253206 | Electrically erasable programmable read-only memory with threshold value measurement circuit | Yoshiyuki Tanaka, Masaki Momodomi | 1993-10-12 |
| 5247480 | Electrically erasable progammable read-only memory with nand cell blocks | Yasuo Itoh, Masaki Momodomi, Yoshihisa Iwata, Tomoharu Tanaka | 1993-09-21 |
| 5245566 | Programmable semiconductor | — | 1993-09-14 |
| 5227319 | Method of manufacturing a semiconductor device | Mitsugi Ogura, Shioji Ariizumi, Fumio Horiguchi | 1993-07-13 |
| 5179427 | Non-volatile semiconductor memory device with voltage stabilizing electrode | Ryozo Nakayama, Riichiro Shirota, Yasuo Itoh, Ryouhei Kirisawa, Hideko Odaira +5 more | 1993-01-12 |
| 5173878 | Semiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cycles | Koji Sakui, Kazunori Ohuchi | 1992-12-22 |
| 5106774 | Method of making trench type dynamic random access memory device | Katsuhiko Hieda, Fumio Horiguchi, Takeshi Hamamoto, Akihiro Nitayama, Kazumasa Sunouchi +1 more | 1992-04-21 |
| 5101262 | Semiconductor memory device and method of manufacturing it | Shoji Ariizumi | 1992-03-31 |
| 5088060 | Electrically erasable programmable read-only memory with NAND memory cell structure | Tetsuo Endoh, Riichiro Shirota, Masaki Momodomi, Tomoharu Tanaka, Shigeyoshi Watanabe | 1992-02-11 |
| 5075890 | Electrically erasable programmable read-only memory with NAND cell | Yasuo Itoh, Masaki Momodomi, Yoshihisa Iwata, Tomoharu Tanaka | 1991-12-24 |
| 5060194 | Semiconductor memory device having a BICMOS memory cell | Koji Sakui, Tsuneaki Fuse, Takehiro Hasegawa, Shigeyoshi Watanabe | 1991-10-22 |
| 5050125 | Electrically erasable programmable read-only memory with NAND cellstructure | Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Masahiko Chiba +3 more | 1991-09-17 |
| 5038191 | Semiconductor memory device | Takehiro Hasegawa, Koji Sakui, Shigeyoshi Watanabe | 1991-08-06 |
| 4996669 | Electrically erasable programmable read-only memory with NAND memory cell structure | Tetsuo Endoh, Riichiro Shirota, Masaki Momodomi, Tomoharu Tanaka, Shigeyoshi Watanabe | 1991-02-26 |
| 4992389 | Making a self aligned semiconductor device | Mitsugi Ogura, Shioji Ariizumi, Fumio Horiguchi | 1991-02-12 |