Issued Patents All Time
Showing 301–325 of 391 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6933556 | Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer | Tetsuo Endoh, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2005-08-23 |
| 6870215 | Semiconductor memory and its production process | Tetsuo Endoh, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi, Yoshihisa Wada +2 more | 2005-03-22 |
| 6727544 | Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer | Tetsuo Endoh, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2004-04-27 |
| 6728139 | Programmable semiconductor memory | — | 2004-04-27 |
| 6593231 | Process of manufacturing electron microscopic sample and process of analyzing semiconductor device | Tetsuo Endoh, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2003-07-15 |
| 6434043 | Programmable semiconductor memory array having series-connected memory | — | 2002-08-13 |
| 6295241 | Dynamic random access memory device | Shigeyoshi Watanabe, Tsuneaki Fuse, Koji Sakui, Masako Ohta, Yukihito Oowaki +1 more | 2001-09-25 |
| 6292390 | Semiconductor device | Koji Sakui, Takehiro Hasegawa, Shigeyoshi Watanabe, Tsuneaki Fuse, Toshiki Seshita +3 more | 2001-09-18 |
| 6232822 | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism | Koji Sakui, Takehiro Hasegawa, Shigeyoshi Watanabe, Tsuneaki Fuse, Toshiki Seshita +3 more | 2001-05-15 |
| 6233176 | Programmable semiconductor memory array having series-connected memory cells | — | 2001-05-15 |
| 6198687 | Semiconductor memory device having a plurality of transfer gates and improved word line and column select timing for high speed write operations | Koji Sakui, Kazunori Ohuchi | 2001-03-06 |
| 6081454 | Electrically erasable programmable read-only memory with threshold value controller for data programming | Kazunori Ohuchi, Tomoharu Tanaka, Yoshihisa Iwata, Yasuo Itoh, Masaki Momodomi | 2000-06-27 |
| 5978265 | Non-volatile semiconductor memory device with nand type memory cell arrays | Ryouhei Kirisawa, Riichiro Shirota, Ryozo Nakayama, Seiichi Aritome, Masaki Momodomi +1 more | 1999-11-02 |
| 5892724 | NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines | Takehiro Hasegawa, Yukihito Oowaki, Ryu Ogiwara, Shinichiro Shiratake, Shigeyoshi Watanabe | 1999-04-06 |
| 5831903 | Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same | Kazunori Ohuchi, Tomoharu Tanaka, Yoshihisa Iwata, Yasuo Itoh, Masaki Momodomi | 1998-11-03 |
| 5824583 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1998-10-20 |
| RE35838 | Electrically erasable programmable read-only memory with NAND cell structure | Masaki Momodomi, Riichiro Shirota, Yasuo Itoh, Kazunori Ohuchi, Ryouhei Kirisawa | 1998-07-07 |
| 5719805 | Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units | — | 1998-02-17 |
| 5715192 | Semiconductor memory device | Takehiro Hasegawa | 1998-02-03 |
| 5657270 | Electrically erasable programmable read-only memory with threshold value controller for data programming | Kazunori Ohuchi, Tomoharu Tanaka, Yoshihisa Iwata, Yasuo Itoh, Masaki Momodomi | 1997-08-12 |
| 5625602 | NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines | Takehiro Hasegawa, Yukihito Oowaki, Ryu Ogiwara, Shinichiro Shiratake, Shigeyoshi Watanabe | 1997-04-29 |
| 5615163 | Semiconductor memory device | Koji Sakui, Hiroshi Nakamura, Tomoharu Tanaka, Masaki Momodomi, Takehiro Hasegawa | 1997-03-25 |
| 5597748 | Method of manufacturing NAND type EEPROM | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1997-01-28 |
| 5596543 | Semiconductor memory device including circuitry for activating and deactivating a word line within a single RAS cycle | Koji Sakui, Kazunori Ohuchi | 1997-01-21 |
| 5523980 | Semiconductor memory device | Koji Sakui, Hiroshi Nakamura, Tomoharu Tanaka, Masaki Momodomi, Kazunori Ohuchi +1 more | 1996-06-04 |