Issued Patents All Time
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7075820 | Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node | Takashi Yamada, Takashi Ohsawa, Yoshihisa Iwata, Yoshiaki Asao | 2006-07-11 |
| 7042040 | Semiconductor device and method for manufacturing the same | — | 2006-05-09 |
| 7042753 | Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements | — | 2006-05-09 |
| 6891225 | Dynamic semiconductor memory device | Takashi Ohsawa | 2005-05-10 |
| 6548848 | Semiconductor memory device | Takashi Ohsawa, Yoshihisa Iwata, Takashi Yamada | 2003-04-15 |
| 6292390 | Semiconductor device | Koji Sakui, Takehiro Hasegawa, Shigeyoshi Watanabe, Fujio Masuoka, Tsuneaki Fuse +3 more | 2001-09-18 |
| 6232822 | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism | Koji Sakui, Takehiro Hasegawa, Shigeyoshi Watanabe, Fujio Masuoka, Tsuneaki Fuse +3 more | 2001-05-15 |
| 5895946 | MOS random access memory having array of trench type one-capacitor/one-transistor memory cells | Takeshi Hamamoto | 1999-04-20 |
| 5731609 | MOS random access memory having array of trench type one-capacitor/one-transistor memory cells | Takeshi Hamamoto | 1998-03-24 |
| 5561311 | Semiconductor memory with insulation film embedded in groove formed on substrate | Takeshi Hamamoto, Katsuhiko Hieda | 1996-10-01 |
| 5488242 | Semiconductor memory device | Kazumasa Sunouchi, Hiroshi Takato, Tohru Ozaki, Naoko Okabe, Katsuhiko Hieda +4 more | 1996-01-30 |
| 5477071 | MOS random access memory having array of trench type one-capacitor/one-transistor memory cells | Takeshi Hamamoto | 1995-12-19 |
| 5387532 | Semiconductor memory having capacitor electrode formed above bit line | Takeshi Hamamoto, Katsuhiko Hieda | 1995-02-07 |
| 5371024 | Semiconductor device and process for manufacturing the same | Katsuhiko Hieda, Hiroshi Takato, Fujio Masuoka | 1994-12-06 |
| 5363325 | Dynamic semiconductor memory device having high integration density | Kazumasa Sunouchi, Tsuneaki Fuse, Akihiro Nitayama, Takehiro Hasegawa, Shigeyoshi Watanabe +1 more | 1994-11-08 |
| 5350708 | Method of making dynamic random access semiconductor memory device | Atsushi Yagishita, Katsuhiko Hieda, Akihiro Nitayama | 1994-09-27 |
| 5258635 | MOS-type semiconductor integrated circuit device | Akihiro Nitayama, Hiroshi Takato, Fujio Masuoka | 1993-11-02 |
| 5250830 | Dynamic type semiconductor memory device and its manufacturing method | Atsushi Yagishita, Katsuhiko Hieda, Akihiro Nitayama | 1993-10-05 |
| 5235199 | Semiconductor memory with pad electrode and bit line under stacked capacitor | Takeshi Hamamoto, Katsuhiko Hieda | 1993-08-10 |
| 5227319 | Method of manufacturing a semiconductor device | Mitsugi Ogura, Shioji Ariizumi, Fujio Masuoka | 1993-07-13 |
| 5202751 | Semiconductor integrated circuit | — | 1993-04-13 |
| 5138412 | Dynamic ram, having an improved large capacitance | Katsuhiko Hieda, Akihiro Nitayama | 1992-08-11 |
| 5106774 | Method of making trench type dynamic random access memory device | Katsuhiko Hieda, Takeshi Hamamoto, Akihiro Nitayama, Kazumasa Sunouchi, Kei Kurosawa +1 more | 1992-04-21 |
| 5049957 | MOS type dynamic random access memory | Satoshi Inoue, Akihiro Nitayama, Kazumasa Sunouchi | 1991-09-17 |
| 5043298 | Process for manufacturing a DRAM cell | Takashi Yamada, Satoshi Inoue, Akihiro Nitayama, Kazumasa Sunouchi | 1991-08-27 |