Issued Patents All Time
Showing 76–100 of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299714 | Semiconductor device and method of manufacturing the same | Moon Sik Seo | 2016-03-29 |
| 9184171 | Semiconductor integrated circuit and method of producing the same | Seo Moon-Sik | 2015-11-10 |
| 9012971 | Semiconductor device and method of manufacturing the same | Moon Sik Seo | 2015-04-21 |
| 8969944 | Semiconductor integrated circuit and method of producing the same | Seo Moon-Sik | 2015-03-03 |
| 8518828 | Semiconductor device fabrication method | Eiichi Nishimura | 2013-08-27 |
| 8258571 | MOS semiconductor memory device having charge storage region formed from stack of insulating films | Masayuki Kohno, Tatsuo Nishita, Minoru Honda, Toshio Nakanishi, Yoshihiro Hirota | 2012-09-04 |
| 8124484 | Forming a MOS memory device having a dielectric film laminate as a charge accumulation region | Masayuki Kohno, Syuichiro Otao, Minoru Honda, Toshio Nakanishi | 2012-02-28 |
| 7315059 | Semiconductor memory device and manufacturing method for the same | Fujio Masuoka, Shinji Horii, Takuji Tanigami, Yoshihisa Wada, Takashi Yokoyama +1 more | 2008-01-01 |
| 7141506 | Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same | Fujio Masuoka, Noboru Takeuchi, Takuji Tanigami, Takashi Yokoyama | 2006-11-28 |
| 7135726 | Semiconductor memory and its production process | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2006-11-14 |
| 7061038 | Semiconductor memory device and its production process | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Shinji Horii | 2006-06-13 |
| 6933556 | Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2005-08-23 |
| 6870215 | Semiconductor memory and its production process | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi, Yoshihisa Wada +2 more | 2005-03-22 |
| 6727544 | Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2004-04-27 |
| 6593231 | Process of manufacturing electron microscopic sample and process of analyzing semiconductor device | Fujio Masuoka, Takuji Tanigami, Takashi Yokoyama, Noboru Takeuchi | 2003-07-15 |
| 6188611 | Non-volatile semiconductor memory device | Yoshiyuki Tanaka, Seiichi Aritome, Riichiro Shirota, Susumu Shuto, Tomoharu Tanaka +2 more | 2001-02-13 |
| 6014330 | Non-volatile semiconductor memory device | Yoshiyuki Tanaka, Seiichi Aritome, Riichiro Shirota, Susumu Shuto, Tomoharu Tanaka +2 more | 2000-01-11 |
| 5946231 | Non-volatile semiconductor memory device | Yoshiyuki Tanaka, Seiichi Aritome, Riichiro Shirota, Susumu Shuto, Tomoharu Tanaka +2 more | 1999-08-31 |
| 5895949 | Semiconductor device having inversion inducing gate | — | 1999-04-20 |
| 5824583 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1998-10-20 |
| 5774397 | Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state | Yoshiyuki Tanaka, Seiichi Aritome, Riichiro Shirota, Susumu Shuto, Tomoharu Tanaka +2 more | 1998-06-30 |
| 5677556 | Semiconductor device having inversion inducing gate | — | 1997-10-14 |
| 5602789 | Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller | Riichiro Shirota, Kazunori Ohuchi, Ryouhei Kirisawa, Seiichi Aritome, Tomoharu Tanaka +1 more | 1997-02-11 |
| 5597748 | Method of manufacturing NAND type EEPROM | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1997-01-28 |
| 5596523 | Electrically erasable programmable read-only memory with an array of one-transistor memory cells | Riichiro Shirota | 1997-01-21 |