Issued Patents All Time
Showing 51–75 of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10783936 | Reading device and logic device | Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno | 2020-09-22 |
| 10783294 | System, method, and non-transitory computer readable recording medium storing a program recorded thereon for supporting a design of a circuit including a stochastic operation element | Masanori Natsui, Akira Tamakoshi, Takahiro Hanyu, Akira Mochizuki, Hiroki Koike +1 more | 2020-09-22 |
| 10749107 | Method of manufacturing magnetic tunnel coupling element | Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Hideo Ohno | 2020-08-18 |
| 10741228 | Memory device | Yitao Ma | 2020-08-11 |
| 10693449 | Switching circuit device, step-down DC-DC converter, and element unit | Kazuki Itoh | 2020-06-23 |
| 10665282 | Memory circuit provided with variable-resistance element | Hiroki Koike | 2020-05-26 |
| 10658572 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota WATANABE +5 more | 2020-05-19 |
| 10644234 | Method for producing magnetic memory comprising magnetic tunnel junction element | Kenchi Ito, Shoji Ikeda, Hideo Sato, Hideo Ohno, Sadahiko Miura +2 more | 2020-05-05 |
| 10643701 | Memory device and memory system | Yitao Ma | 2020-05-05 |
| 10622550 | Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit | Shunsuke Fukami, Hideo Ohno | 2020-04-14 |
| 10586580 | Magnetic tunnel junction element and magnetic memory | Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Hideo Ohno | 2020-03-10 |
| 10424725 | Spintronics element | Soshi Sato, Masaaki Niwa, Hiroaki Honjo, Shoji Ikeda, Hideo Sato +1 more | 2019-09-24 |
| 10410703 | Magnetoresistance effect element and magnetic memory device | Shunsuke Fukami, Toru IWABUCHI, Hideo Ohno | 2019-09-10 |
| 10263180 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shinya Ishikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura +1 more | 2019-04-16 |
| 10164174 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota WATANABE +5 more | 2018-12-25 |
| 10015466 | Spatial information visualization apparatus, storage medium, and spatial information visualization method | Yoshihiro Maruyama, Makoto Hatakeyama, Yuji Kawaguchi, Shohei Matsumoto | 2018-07-03 |
| 9941468 | Magnetoresistance effect element and magnetic memory device | Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno | 2018-04-10 |
| 9928906 | Data-write device for resistance-change memory element | Takahiro Hanyu, Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Hideo Ohno | 2018-03-27 |
| 9928891 | Nonvolatile variable resistance memory circuit which includes magnetic tunnel junction element | Takashi Ohsawa | 2018-03-27 |
| 9740255 | Memory cell and storage device | Takashi Ohsawa | 2017-08-22 |
| 9633708 | Semiconductor storage device using STT-MRAM | Takashi Ohsawa | 2017-04-25 |
| 9536584 | Nonvolatile logic gate device | Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji, Ayuka Tada, Tadahiko Sugibayashi +2 more | 2017-01-03 |
| 9466363 | Integrated circuit | Takashi Ohsawa, Hiroki Koike, Takahiro Hanyu, Hideo Ohno | 2016-10-11 |
| 9466607 | Semiconductor integrated circuit and method of producing the same | Seo Moon-Sik | 2016-10-11 |
| 9318170 | Storage device, memory cell, and data writing method | Takashi Ohsawa | 2016-04-19 |