Issued Patents All Time
Showing 1–25 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12405769 | Random number generation unit and computing system | William Andrew Borders, Takuya Funatsu, Shun Kanai, Keisuke Hayakawa, Hideo Ohno | 2025-09-02 |
| 12159668 | Magneto-optical memory interface | Shigemi Mizukami, Junsaku Nitta, Satoshi Iihama, Yoshiro Hirayama, Seiji Sakai | 2024-12-03 |
| 11690299 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shinya Ishikawa, Hideo Ohno, Tetsuo Endoh | 2023-06-27 |
| 11563169 | Magnetic tunnel junction element and magnetic memory | Hideo Sato, Yoshihisa Horikawa, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno +2 more | 2023-01-24 |
| 11557719 | Magnetoresistance effect element, circuit device, and circuit unit | Aleksandr Kurenkov, William Andrew Borders, Hideo Ohno, Tetsuo Endoh | 2023-01-17 |
| 11200933 | Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same | Chaoliang Zhang, Ayato Ohkawara, Kyota WATANABE, Hideo Ohno, Tetsuo Endoh | 2021-12-14 |
| 10998491 | Magnetoresistive element and magnetic memory | Kyota WATANABE, Hideo Sato, Hideo Ohno, Tetsuo Endoh | 2021-05-04 |
| 10706996 | Magnetic material and method of manufacturing the same | Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Hideo Ohno | 2020-07-07 |
| 10658572 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota WATANABE +5 more | 2020-05-19 |
| 10622550 | Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit | Hideo Ohno, Tetsuo Endoh | 2020-04-14 |
| 10410703 | Magnetoresistance effect element and magnetic memory device | Toru IWABUCHI, Hideo Ohno, Tetsuo Endoh | 2019-09-10 |
| 10263180 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shinya Ishikawa, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno +1 more | 2019-04-16 |
| 10164174 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota WATANABE +5 more | 2018-12-25 |
| 10020039 | Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method | Michihiko Yamanouchi, Hideo Ohno | 2018-07-10 |
| 9941468 | Magnetoresistance effect element and magnetic memory device | Chaoling Zhang, Tetsuro Anekawa, Hideo Ohno, Tetsuo Endoh | 2018-04-10 |
| 9799822 | Magnetic memory element and magnetic memory | Nobuyuki Ishiwata, Tadahiko Sugibayashi, Hideo Ohno, Shoji Ikeda, Michihiko Yamanouchi | 2017-10-24 |
| 9577182 | Magnetoresistance effect element and magnetic memory | Shoji Ikeda, Hideo Sato, Michihiko Yamanouchi, Fumihiro Matsukura, Hideo Ohno +1 more | 2017-02-21 |
| 9379312 | Magnetoresistive effect element and magnetic random access memory using the same | Tadahiko Sugibayashi, Eiji Kariyada, Kaoru Mori, Norikazu Ohshima, Tetsuhiro Suzuki +3 more | 2016-06-28 |
| 9202545 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno | 2015-12-01 |
| 9105831 | Nonvolatile magnetic element and nonvolatile magnetic device | Daichi Chiba | 2015-08-11 |
| 9083336 | Non-volatile logic operation device | Nobuyuki Ishiwata | 2015-07-14 |
| 8994130 | Magnetic memory element and magnetic memory | Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Norikazu Ohshima | 2015-03-31 |
| 8884388 | Magnetic memory element, magnetic memory and manufacturing method of magnetic memory | Kiyokazu Nagahara, Tetsuhiro Suzuki | 2014-11-11 |
| 8791534 | Magnetic memory device and magnetic memory | Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Norikazu Ohshima | 2014-07-29 |
| 8787076 | Magnetic memory and method of manufacturing the same | Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima | 2014-07-22 |