NO

Norikazu Ohshima

NE Nec: 31 patents #239 of 14,502Top 2%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
Overall (All Time): #113,730 of 4,157,543Top 3%
32
Patents All Time

Issued Patents All Time

Showing 1–25 of 32 patents

Patent #TitleCo-InventorsDate
9379312 Magnetoresistive effect element and magnetic random access memory using the same Tadahiko Sugibayashi, Eiji Kariyada, Kaoru Mori, Shunsuke Fukami, Tetsuhiro Suzuki +3 more 2016-06-28
8994130 Magnetic memory element and magnetic memory Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata 2015-03-31
8923042 Magnetic random access memory Nobuyuki Ishiwata, Hideaki Numata 2014-12-30
8830735 Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film Eiji Kariyada, Katsumi Suemitsu, Hironobu Tanigawa, Kaoru Mori, Tetsuhiro Suzuki +2 more 2014-09-09
8791534 Magnetic memory device and magnetic memory Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata 2014-07-29
8787076 Magnetic memory and method of manufacturing the same Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara 2014-07-22
8737119 Magnetic memory cell and magnetic random access memory Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata 2014-05-27
8687414 Magnetic memory element and magnetic random access memory Kiyokazu Nagahara, Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki 2014-04-01
8592930 Magnetic memory element, magnetic memory and initializing method Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata 2013-11-26
8565011 Method of initializing magnetic memory element Shunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata 2013-10-22
8559214 Magnetic memory device and magnetic random access memory Shunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata 2013-10-15
8547733 Magnetic random access memory Nobuyuki Ishiwata, Hideaki Numata 2013-10-01
8537604 Magnetoresistance element, MRAM, and initialization method for magnetoresistance element Tetsuhiro Suzuki, Shunsuke Fukami, Kiyokazu Nagahara, Nobuyuki Ishiwata 2013-09-17
8526222 Magnetic random access memory Nobuyuki Ishiwata, Hideaki Numata 2013-09-03
8514616 Magnetic memory element and magnetic memory Nobuyuki Ishiwata, Shunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki 2013-08-20
8477528 Magnetic memory cell and magnetic random access memory Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata 2013-07-02
8379429 Domain wall motion element and magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara, Shunsuke Fukami 2013-02-19
8363461 Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory Tetsuhiro Suzuki, Shunsuke Fukami, Kiyokazu Nagahara, Nobuyuki Ishiwata 2013-01-29
8351249 Magnetic random access memory Nobuyuki Ishiwata, Hideaki Numata 2013-01-08
8315087 Magnetic random access memory Yuukou Katou 2012-11-20
8300456 Magnetic random access memory and method of manufacturing the same Hiroaki Honjou, Tetsuhiro Suzuki 2012-10-30
8238135 MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region Tetsuhiro Suzuki, Hideaki Numata 2012-08-07
8194436 Magnetic random access memory, write method therefor, and magnetoresistance effect element Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata 2012-06-05
8174086 Magnetoresistive element, and magnetic random access memory Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara 2012-05-08
8174873 Magnetic random access memory and initializing method for the same Tetsuhiro Suzuki, Shunsuke Fukami, Kiyokazu Nagahara, Nobuyuki Ishiwata 2012-05-08