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Magnetic-domain-wall-displacement memory cell and initializing method therefor |
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Semiconductor device |
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Magnetoresistive effect element, and magnetic random access memory |
— |
2014-12-09 |
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Magnetic random access memory and method of manufacturing the same |
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Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer |
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Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer |
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Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material |
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Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer |
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