SF

Shunsuke Fukami

NE Nec: 32 patents #217 of 14,502Top 2%
TU Tohoku University: 18 patents #9 of 1,680Top 1%
KU Kyoto University: 1 patents #568 of 1,688Top 35%
Overall (All Time): #55,849 of 4,157,543Top 2%
49
Patents All Time

Issued Patents All Time

Showing 26–49 of 49 patents

Patent #TitleCo-InventorsDate
8687414 Magnetic memory element and magnetic random access memory Kiyokazu Nagahara, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima 2014-04-01
8625327 Magnetic random access memory and initializing method for the same Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Oshima, Nobuyuki Ishiwata 2014-01-07
8592930 Magnetic memory element, magnetic memory and initializing method Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata 2013-11-26
8565011 Method of initializing magnetic memory element Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Norikazu Ohshima 2013-10-22
8559214 Magnetic memory device and magnetic random access memory Kiyokazu Nagahara, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Norikazu Ohshima 2013-10-15
8537604 Magnetoresistance element, MRAM, and initialization method for magnetoresistance element Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata 2013-09-17
8514616 Magnetic memory element and magnetic memory Nobuyuki Ishiwata, Norikazu Ohshima, Kiyokazu Nagahara, Tetsuhiro Suzuki 2013-08-20
8503222 Non-volatile logic circuit Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Tadahiko Sugibayashi, Noboru Sakimura +1 more 2013-08-06
8416611 Magnetoresistance effect element and magnetic random access memory Nobuyuki Ishiwata 2013-04-09
8379429 Domain wall motion element and magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara 2013-02-19
8363461 Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata 2013-01-29
8194436 Magnetic random access memory, write method therefor, and magnetoresistance effect element Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima, Nobuyuki Ishiwata 2012-06-05
8174086 Magnetoresistive element, and magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima 2012-05-08
8174873 Magnetic random access memory and initializing method for the same Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara, Nobuyuki Ishiwata 2012-05-08
8159872 Magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara 2012-04-17
8154913 Magnetoresistance effect element and magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara 2012-04-10
8149615 Magnetic random access memory Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara 2012-04-03
8120127 Magnetic random access memory and method of manufacturing the same Kiyokazu Nagahara, Tetsuhiro Suzuki, Norikazu Ohshima, Nobuyuki Ishiwata 2012-02-21
8120950 Semiconductor device Nobuyuki Ishiwata, Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara 2012-02-21
8040724 Magnetic domain wall random access memory Tetsuhiro Suzuki, Norikazu Ohshima, Kiyokazu Nagahara, Nobuyuki Ishiwata 2011-10-18
8023315 Magnetoresistive effect element and magnetic random access memory 2011-09-20
7936627 Magnetoresistance effect element and MRAM 2011-05-03
7929342 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory Hideaki Numata, Norikazu Ohshima, Tetsuhiro Suzuki, Tadahiko Sugibayashi, Nobuyuki Ishiwata 2011-04-19
7848137 MRAM and data read/write method for MRAM Naoki Kasai 2010-12-07