Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10325639 | Initialization process for magnetic random access memory (MRAM) production | Guenole Jan, Huanlong Liu, Jian Zhu | 2019-06-18 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2019-03-12 |
| 10115892 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Huanlong Liu, Ru-Ying Tong, Jodi Mari Iwata +4 more | 2018-10-30 |
| 10102896 | Adaptive reference scheme for magnetic memory applications | Guenole Jan, Po-Kang Wang, John K. De Brosse | 2018-10-16 |
| 10014465 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2018-07-03 |
| 9842988 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Jian Zhu, Guenole Jan, Po-Kang Wang | 2017-12-12 |
| 9805816 | Implementation of a one time programmable memory using a MRAM stack design | Guenole Jan, Po-Kang Wang, Jian Zhu, Huanlong Liu | 2017-10-31 |
| 9780299 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2017-10-03 |
| 9747965 | Adaptive reference scheme for magnetic memory applications | Guenole Jan, Po-Kang Wang, John K. De Brosse | 2017-08-29 |
| 9425387 | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing | Huanlong Liu, Jian Zhu, Guenole Jan, Ruth Tong, Luc Thomas | 2016-08-23 |
| 9343132 | MRAM write pulses to dissipate intermediate state domains | Po-Kang Wang, Guenole Jan | 2016-05-17 |
| 7872904 | Magnetic random access memory | Ding-Yeong Wang, Chien-Chung Hung | 2011-01-18 |
| 7800937 | Method for switching magnetic moment in magnetoresistive random access memory with low current | Chien-Chung Hung, Ming-Jer Kao, Lien-Chang Wang | 2010-09-21 |
| 7577019 | Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device | Chien-Chung Hung, Ming-Jer Kao | 2009-08-18 |
| 7577017 | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | Chien-Chung Hung, Ming-Jer Kao | 2009-08-18 |
| 7539049 | Magnetic random access memory and operation method | Chien-Chung Hung, Ming-Jer Kao, Ding-Yeong Wang | 2009-05-26 |
| 7515462 | Writing method for magnetic memory cell and magnetic memory array structure | Ming-Jer Kao | 2009-04-07 |
| 7515458 | Structure and access method for magnetic memory cell and circuit of magnetic memory | Chien-Chung Hung, Yung-Hsiang Chen, Ming-Jer Kao, Yung-Hung Wang | 2009-04-07 |
| 7463510 | High-bandwidth magnetoresistive random access memory devices | Chien-Chung Hung, Ming-Jer Kao | 2008-12-09 |
| 7420837 | Method for switching magnetic moment in magnetoresistive random access memory with low current | Chien-Chung Hung, Ming-Jer Kao, Lien-Chang Wang | 2008-09-02 |
| 7372724 | Method for accessing data on magnetic memory | Chien-Chung Hung | 2008-05-13 |
| 7208808 | Magnetic random access memory with lower switching field | Yung-Hsiang Chen, Wei-Chuan Chen, Ming-Jer Kao, Lien-Chang Wang | 2007-04-24 |