Issued Patents All Time
Showing 151–175 of 189 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9281307 | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure | Chia-Pin Lin, Sheng-Hsiung Wang, Fan-Yi Hsu, Chun-Liang Tai | 2016-03-08 |
| 9263252 | Method of protecting an interlayer dielectric layer and structure formed thereby | Chun-Wei Chang, Yi-An Lin, Neng-Kuo Chen, Sey-Ping Sun, Clement Hsingjen Wann | 2016-02-16 |
| 9263586 | Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure | Chun-Hsiang Fan, Yung-Ta Li | 2016-02-16 |
| 9257323 | Semiconductor device and method for forming the same | Tung Ying Lee, Pei-Yi Lin, Chun-Hsiang Fan, Sheng-Wen Yu, Neng-Kuo Chen +1 more | 2016-02-09 |
| 9257558 | FinFET device with gate oxide layer | Tung Ying Lee, I-Ming Chang | 2016-02-09 |
| 9214552 | Method for fabricating a strain feature in a gate spacer of a semiconductor device | — | 2015-12-15 |
| 9209280 | Methods for doping fin field-effect transistors | Chun Hsiung Tsai, De-Wei Yu | 2015-12-08 |
| 9202691 | Semiconductor device having modified profile metal gate | Chi-Wen Liu, Zhao-Cheng Chen, Ming-Huan Tsai, Clement Hsingjen Wann | 2015-12-01 |
| 9184088 | Method of making a shallow trench isolation (STI) structures | Chun Hsiung Tsai, Chii-Ming Wu, Ziwei Fang | 2015-11-10 |
| 9171762 | Semiconductor device and fabrication method thereof | Zhao-Cheng Chen | 2015-10-27 |
| 9159552 | Method of forming a germanium-containing FinFET | Chun-Hsiang Fan, Kun-Yen Lu, Ming-Huan Tsai | 2015-10-13 |
| 9159604 | Semiconductor device and method for forming the same | — | 2015-10-13 |
| 9153695 | Fin-last finFET and methods of forming same | Clement Hsingjen Wann, Ming-Huan Tsai | 2015-10-06 |
| 9093531 | Fin structure of semiconductor device | Chung-Hsien Chen, Tung Ying Lee, Chi-Wen Liu | 2015-07-28 |
| 9087903 | Buffer layer omega gate | Tung Ying Lee, Chung-Hsien Chen, Chi-Wen Liu | 2015-07-21 |
| 9048181 | Mechanisms for forming ultra shallow junction | Chii-Ming Wu, Chun Hsiung Tsai | 2015-06-02 |
| 8987791 | FinFETs and methods for forming the same | Chun-Hsiang Fan, Tsu-Hsiu Perng, Chi Kang Liu, Yung-Ta Li, Ming-Huan Tsai +2 more | 2015-03-24 |
| 8980719 | Methods for doping fin field-effect transistors | Chun Hsiung Tsai, De-Wei Yu | 2015-03-17 |
| 8963251 | Semiconductor device with strain technique | Tung Ying Lee, Chung-Hsien Chen, Chi-Wen Liu | 2015-02-24 |
| 8946035 | Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost | Ming-Huan Tsai, Clement Hsingjen Wann | 2015-02-03 |
| 8912608 | Semiconductor device and fabrication method thereof | Chun-Fu Cheng | 2014-12-16 |
| 8877602 | Mechanisms of doping oxide for forming shallow trench isolation | Chun Hsiung Tsai, Chii-Ming Wu, Ziwei Fang | 2014-11-04 |
| 8828813 | Replacement channels | Meng-Chun Chang | 2014-09-09 |
| 8809175 | Methods of anneal after deposition of gate layers | Chun Hsiung Tsai, Xiong-Fei Yu, Da-Wen Lin | 2014-08-19 |
| 8809139 | Fin-last FinFET and methods of forming same | Ming-Huan Tsai, Clement Hsingjen Wann | 2014-08-19 |