Issued Patents All Time
Showing 51–75 of 299 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12004431 | Structure and method for MRAM devices | Tsung-Chieh Hsiao, Po-Sheng Lu, Wei-Chih Wen, Liang-Wei Wang, Yu-Jen Wang +1 more | 2024-06-04 |
| 11996467 | Method for epitaxial growth and device | Tzu-Hsiang Hsu, Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang | 2024-05-28 |
| 11984489 | Air spacer for a gate structure of a transistor | Yi-Hsiu Liu, Feng-Cheng Yang, Tsung-Lin Lee, Wei-Yang Lee, Yen-Ting Chen | 2024-05-14 |
| 11949002 | Semiconductor device and method | I-Hsieh Wong, Yen-Ting Chen, Wei-Yang Lee, Feng-Cheng Yang | 2024-04-02 |
| 11937515 | MRAM structure for balanced loading | Chih-Fan Huang, Hsiang-Ku Shen, Liang-Wei Wang, Chen-Chiu Huang, Dian-Hau Chen | 2024-03-19 |
| 11923405 | Metal-insulator-metal structure and methods of fabrication thereof | Chih-Fan Huang, Hung-Chao Kao, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Hsiang-Ku Shen +2 more | 2024-03-05 |
| 11917803 | Method for forming different types of devices | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2024-02-27 |
| 11908748 | Semiconductor devices and methods of forming the same | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2024-02-20 |
| 11901408 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin | 2024-02-13 |
| 11894421 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2024-02-06 |
| 11862712 | Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases | Feng-Ching Chu, Chung-Chi Wen, Wei-Yuan Lu, Feng-Cheng Yang | 2024-01-02 |
| 11862713 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang | 2024-01-02 |
| 11855022 | Shielding structures | Chih-Fan Huang, Hui-Chi Chen, Kuo-Chin Chang, Chien-Huang Yeh, Hong-Seng Shue +1 more | 2023-12-26 |
| 11855097 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Kai-Hsuan Lee, Wei-Yang Lee, Feng-Cheng Yang | 2023-12-26 |
| 11854688 | Semiconductor device and method | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2023-12-26 |
| 11855207 | FinFET structure and method with reduced fin buckling | Wei-Jen Lai, Tsung-Lin Lee | 2023-12-26 |
| 11856743 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2023-12-26 |
| 11848230 | Different isolation liners for different type FinFETs and associated isolation feature fabrication | Tzung-Yi Tsai, Tsung-Lin Lee | 2023-12-19 |
| 11830922 | Semiconductor device with air-spacer | Wei-Yang Lee, Feng-Cheng Yang, Chung-Te Lin | 2023-11-28 |
| 11824121 | Semiconductor device with self-aligned wavy contact profile and method of forming the same | Chia-Ta Yu, Yen-Chieh Huang, Wei-Yuan Lu, Feng-Cheng Yang | 2023-11-21 |
| 11810825 | Methods of forming epitaxial structures in fin-like field effect transistors | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2023-11-07 |
| 11791371 | Resistor structure | Chih-Fan Huang, Hsiang-Ku Shen, Dian-Hau Chen | 2023-10-17 |
| 11777004 | Fin field effect transistor (FinFET) device structure and method for forming the same | Kai-Hsuan Lee, I-Wen Wu, Chen-Ming Lee, Jian-Hao Chen, Fu-Kai Yang +2 more | 2023-10-03 |
| 11769820 | Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2023-09-26 |
| 11744084 | Semiconductor devices and method of forming the same | Hsiang-Ku Shen, Liang-Wei Wang, Dian-Hau Chen | 2023-08-29 |