Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9711373 | Method of fabricating a gate dielectric for high-k metal gate devices | Che-Hao Chang, Cheng-Hao Hou, Chen-Hua Yu | 2017-07-18 |
| 7579612 | Resistive memory device having enhanced resist ratio and method of manufacturing same | Denny Tang, Wen-Yuan Chang, Tzyh-Cheang Lee | 2009-08-25 |
| 7332760 | Ferroelectric material for ferroelectric devices | Cheng-Lung Hung | 2008-02-19 |
| 7307304 | Ferroelectric materials and ferroelectric memory device made therefrom | Cheng-Lung Hung | 2007-12-11 |
| 7071007 | Method of forming a low voltage drive ferroelectric capacitor | Yuan-Chieh Tseng, Chao-Hsiung Wang | 2006-07-04 |
| 6927136 | Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof | Hsiang-Lan Lung, Kuang Yeu Hsieh, Ruichen Liu, Jiun-Yi Tseng | 2005-08-09 |
| 6640403 | Method for forming a dielectric-constant-enchanced capacitor | Wong-Cheng Shih, Lan-Lin Chao, Chich-Shang Chang | 2003-11-04 |
| 6559497 | Microelectronic capacitor with barrier layer | Wong-Cheng Shih, Chich-Shang Chang | 2003-05-06 |
| 6456482 | Microelectronic capacitor with capacitor plate layer formed of tungsten rich tungsten oxide material | Wong-Cheng Shih, Chich-Shang Chang | 2002-09-24 |
| 5981109 | Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub.1-X oxide absorption composites for attenuating phase shifting blanks and masks | Chih-Chiang Tu, Jon-Yiew Gan, Chao-Chen Cheng | 1999-11-09 |
| 5973589 | Zno varistor of low-temperature sintering ability | Jyh-Kuang Tsai | 1999-10-26 |
| 5714285 | Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks | Chih-Chiang Tu, Jon-Yiew Gan, Chao-Chen Cheng | 1998-02-03 |
| 5667919 | Attenuated phase shift mask and method of manufacture thereof | Chih-Chiang Tu, Jon-Yiew Gan, Chin-Lung Lin | 1997-09-16 |