Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9390913 | Semiconductor dielectric interface and gate stack | Shih-Wei Wang, Ravi Droopad, Gerben Doombos, Georgios Vellianitis, Matthias Passlack | 2016-07-12 |
| 9318447 | Semiconductor device and method of forming vertical structure | Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen +4 more | 2016-04-19 |
| 9312186 | Method of forming horizontal gate all around structure | Huan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chun-Hsiung Lin | 2016-04-12 |
| 9276084 | Transistor and method for forming the same | Mao-Lin Huang, Chun-Hsiung Lin | 2016-03-01 |
| 9263295 | Nanowire MOSFET with support structures for source and drain | Mao-Lin Huang, Chun-Hsiung Lin, Jean-Pierre Colinge | 2016-02-16 |
| 9214513 | Fin structure and method for forming the same | Chun-Hsiung Lin, Carlos H. Diaz, Hui-Cheng Chang, Syun-Ming Jang, Mao-Lin Huang | 2015-12-15 |
| 9184289 | Semiconductor device and formation thereof | Mao-Lin Huang, Chun-Hsiung Lin, Meng-Ku Chen, Li-Ting Wang, Hung-Ta Lin | 2015-11-10 |
| 9166035 | Delta doping layer in MOSFET source/drain region | Hung-Ta Lin, Mao-Lin Huang, Li-Ting Wang, Meng-Ku Chen, Chun-Hsiung Lin +2 more | 2015-10-20 |
| 9147766 | Semiconductor device having fin-type channel and method for forming the same | Chun-Hsiung Lin, Mao-Lin Huang | 2015-09-29 |
| 9048301 | Nanowire MOSFET with support structures for source and drain | Mao-Lin Huang, Chun-Hsiung Lin, Jean-Pierre Colinge | 2015-06-02 |
| 9026959 | Method and device for increasing fin device density for unaligned fins | Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh | 2015-05-05 |
| 8806397 | Method and device for increasing fin device density for unaligned fins | Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh | 2014-08-12 |
| 8769446 | Method and device for increasing fin device density for unaligned fins | Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh | 2014-07-01 |
| 8703565 | Bottom-notched SiGe FinFET formation using condensation | Chih-Hao Chang, Jeffrey Junhao Xu, Chih-Hsiang Chang | 2014-04-22 |
| 8633076 | Method for adjusting fin width in integrated circuitry | Chih-Sheng Chang, Yi-Tang Lin | 2014-01-21 |
| 8623728 | Method for forming high germanium concentration SiGe stressor | Chih-Hao Chang, Jeff J. Xu, Chih Chieh Yeh, Chih-Hsiang Chang | 2014-01-07 |
| 8525267 | Device and method for forming Fins in integrated circuitry | Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh | 2013-09-03 |
| 8526315 | Flow state attributes for producing media flow statistics at a network node | Xiaode Xu | 2013-09-03 |
| 8502502 | Electricity storing device and electronic device | Shyh-Ching Huang, Yu-You Ting | 2013-08-06 |
| 8486769 | Method for forming metrology structures from fins in integrated circuitry | Chih-Sheng Chang, Ming-Feng Shieh | 2013-07-16 |
| 8395195 | Bottom-notched SiGe FinFET formation using condensation | Chih-Hao Chang, Jeffrey Junhao Xu, Chih-Hsiang Chang | 2013-03-12 |
| 8145789 | Method providing a single console control point for a network device cluster | Arnold Stamler, Tohru Kao, Pratima Aiyagari | 2012-03-27 |