Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8581359 | Schottky barrier diode | Taku Horii, Tomihito Miyazaki | 2013-11-12 |
| 8502310 | III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer | Hiromu Shiomi, Kazuhide Sumiyoshi, Yu Saitoh | 2013-08-06 |
| 8502337 | Schottky barrier diode and method for manufacturing Schottky barrier diode | Taku Horii, Tomihito Miyazaki | 2013-08-06 |
| 8476086 | Semiconductor device and method of its manufacture | Shinsuke Fujiwara, Takashi Sakurada, Yusuke Yoshizumi | 2013-07-02 |
| 8410524 | Group III nitride semiconductor device and epitaxial substrate | Tatsuya Tanabe, Kouhei Miura, Takashi Sakurada | 2013-04-02 |
| 8405125 | Semiconductor device and method for producing the same | Masaya Okada | 2013-03-26 |
| 8362521 | III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device | Seiji Nakahata, Hideaki Nakahata, Koji Uematsu, Youichi Nagai, Takao Nakamura | 2013-01-29 |
| 8349078 | Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device | Hiromu Shiomi, Yu Saitoh, Kazuhide Sumiyoshi, Akihiro Hachigo, Seiji Nakahata | 2013-01-08 |
| 8227810 | Semiconductor device and method for manufacturing same | Masaya Okada, Seiji Yaegashi, Ken Nakata | 2012-07-24 |
| 8110484 | Conductive nitride semiconductor substrate and method for producing the same | Fumitaka Sato, Seiji Nakahata | 2012-02-07 |
| 7998836 | Method for fabricating gallium nitride based semiconductor electronic device | Hiromu Shiomi, Shinsuke Fujiwara, Yu Saitoh | 2011-08-16 |
| 7884393 | High electron mobility transistor, field-effect transistor, and epitaxial substrate | Shin Hashimoto, Takashi Sakurada, Tatsuya Tanabe, Kouhei Miura, Tomihito Miyazaki | 2011-02-08 |
| 7872285 | Vertical gallium nitride semiconductor device and epitaxial substrate | Shin Hashimoto, Tatsuya Tanabe, Kouhei Miura, Takashi Sakurada | 2011-01-18 |
| 7763892 | Group III nitride semiconductor device and epitaxial substrate | Kouhei Miura, Takashi Sakurada | 2010-07-27 |
| 7749828 | Method of manufacturing group III Nitride Transistor | Shin Hashimoto, Takashi Sakurada, Tatsuya Tanabe, Kouhei Miura, Tomihito Miyazaki | 2010-07-06 |
| 7732236 | III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device | Seiji Nakahata, Hideaki Nakahata, Koji Uematsu, Youichi Nagai, Takao Nakamura | 2010-06-08 |
| 7687822 | Light emitting apparatus | Youichi Nagai, Takao Nakamura, Takashi Sakurada, Katsushi Akita, Koji Uematsu +3 more | 2010-03-30 |
| 7531889 | Epitaxial substrate and semiconductor element | Takuji Okahisa, Takashi Sakurada | 2009-05-12 |
| 7202509 | Light emitting apparatus | Youichi Nagai, Takao Nakamura, Takashi Sakurada, Katsushi Akita, Koji Uematsu +3 more | 2007-04-10 |
| 7195937 | Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer | Katsushi Akita, Masashi Yamashita | 2007-03-27 |
| 7190004 | Light emitting device | Youichi Nagai, Takao Nakamura, Takashi Sakurada, Katsushi Akita, Koji Uematsu +3 more | 2007-03-13 |
| 6756607 | Method and device for determining backgate characteristics | Masashi Yamashita, Mitsutaka Tsubokura | 2004-06-29 |
| 6235543 | Method of evaluating a semiconductor wafer | — | 2001-05-22 |
| 6184498 | Apparatus for thermally processing semiconductor wafer | — | 2001-02-06 |
| 6127288 | Method of thermally processing semiconductor wafer | — | 2000-10-03 |