Issued Patents All Time
Showing 1–25 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12303613 | High-strength collagen sponge | Gaku Kanno | 2025-05-20 |
| 11935744 | Method for manufacturing nitride semiconductor device | Isao Makabe | 2024-03-19 |
| 11559603 | High-strength collagen sponge | Gaku Kanno | 2023-01-24 |
| 11557668 | High electron mobility transistor with reverse arrangement of channel layer and barrier layer | — | 2023-01-17 |
| 10971614 | High electron mobility transistor with reverse arrangement of channel layer and barrier layer | — | 2021-04-06 |
| 10943999 | Field effect transistor and process of forming the same | — | 2021-03-09 |
| 10790385 | High electron mobility transistor with reverse arrangement of channel layer and barrier layer | — | 2020-09-29 |
| 10580887 | Field effect transistor and process of forming the same | — | 2020-03-03 |
| 10263094 | Nitride semiconductor device and process of forming the same | — | 2019-04-16 |
| 10211323 | Hemt having heavily doped N-type regions and process of forming the same | — | 2019-02-19 |
| 10147811 | Process of forming a high electron mobility transistor (HEMT) | — | 2018-12-04 |
| 10038086 | Process for forming a high electron mobility transistor | Tsuyoshi Kouchi, Isao Makabe, Keiichi Yui | 2018-07-31 |
| 9865720 | High electron-mobility transistor | — | 2018-01-09 |
| 9701937 | Carrier for cultivation of cells | Kanae Kasai | 2017-07-11 |
| 9685548 | High electron mobility transistor and method of forming the same using atomic layer deposition technique | — | 2017-06-20 |
| 9437725 | Semiconductor device and semiconductor substrate | — | 2016-09-06 |
| 9355843 | Semiconductor device and method of manufacturing the same | Keiichi Yui, Tsuyoshi Kouchi, Isao Makabe | 2016-05-31 |
| 9159821 | Nitride semiconductor device with limited instantaneous current reduction | Keiichi Yui, Hiroyuki Ichikawa, Tsuyoshi Kouchi | 2015-10-13 |
| 9123534 | Semiconductor device and method of manufacturing the same | Keiichi Yui, Tsuyoshi Kouchi, Isao Makabe | 2015-09-01 |
| 9029873 | Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device | Keiichi Yui, Tsuyoshi Kouchi, Isao Makabe, Hiroyuki Ichikawa | 2015-05-12 |
| 8993416 | Method of manufacturing semiconductor device | Keiichi Yui, Isao Makabe, Hiroyuki Ichikawa | 2015-03-31 |
| 8987015 | Method for fabricating semiconductor device | Keiichi Yui, Akira Furuya, Takamitsu Kitamura, Isao Makabe | 2015-03-24 |
| 8754419 | Semiconductor device | Isao Makabe, Keiichi Yui, Takamitsu Kitamura | 2014-06-17 |
| 8748274 | Method for fabricating semiconductor device | Seiji Yaegashi | 2014-06-10 |
| 8742426 | Semiconductor device | Isao Makabe, Keiichi Yui | 2014-06-03 |